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ROHM N-Channel IGBT 50 A 650 V, 3-Pin TO-247N Through Hole RGW00TS65HRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGW00TS65HRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 254W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- This IGBT is AEC-Q101 qualified for automotive applications.
- Designed with low collector emitter saturation voltage for enhanced efficiency.
- High-speed switching capability up to 1 MHz reduces switching losses.
- Pb-free lead plating and RoHS compliant to meet environmental standards.
- Operates reliably in temperatures ranging from -40°C to 175°C.
- Suitable for industrial inverter, DC-DC converters, and power factor correction circuits.
- The device benefits from a field stop trench structure improving switching performance.
- Maximum power dissipation is rated at 254 W for robust operation.
Product Description
ROHM RGW00TS65HRC11 is an N-Channel Insulated-Gate Bipolar Transistor (IGBT) tailored for high-performance power switching applications. This device supports a maximum continuous collector current of 50 A and a collector emitter voltage of 650 V, housed in a 3-Pin TO-247N package for through-hole mounting. The RGW00TS65HRC11 is specifically engineered with a field stop trench structure that ensures high-speed switching with reduced losses, making it highly efficient for automotive and industrial power electronics.
Its low collector emitter saturation voltage (1.9V max) enhances power efficiency, while the device supports switching speeds up to 1 MHz. With a power dissipation capability of 254 W, this IGBT can handle demanding power environments.
This component is AEC-Q101 qualified, confirming its suitability for automotive applications. It is designed to operate reliably across a wide temperature range from -40°C to 175°C, ensuring robust performance in harsh conditions.
The ROHM RGW00TS65HRC11 is lead-free and RoHS compliant, adhering to modern environmental and safety standards. Its through-hole TO-247N package allows easy integration into power modules and inverter circuits.
Ideal applications include automotive electronics, on and off-board computers, DC-DC converters, power factor correction equipment, and industrial inverters requiring efficient and reliable power switching devices.
This IGBT is AEC-Q101 qualified for automotive applications. Designed with low collector emitter saturation voltage for enhanced efficiency. High-speed switching capability up to 1 MHz reduces switching losses. Pb-free lead plating and RoHS compliant to meet environmental standards.
Operates reliably in temperatures ranging from -40°C to 175°C. Suitable for industrial inverter, DC-DC converters, and power factor correction circuits. The device benefits from a field stop trench structure improving switching performance.
Maximum power dissipation is rated at 254 W for robust operation. Package type TO-247N enables easy through-hole mounting in power electronics setups. Explore more products in the IGBT category at EnvMart to enhance your power electronic designs with trusted components from ROHM and other leading manufacturers.
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Frequently Asked Questions
The maximum continuous collector current for the RGW00TS65HRC11 is 50 A.
This IGBT supports a maximum collector emitter voltage of 650 V.
The maximum power dissipation rated for this model is 254 W.
It operates reliably in temperatures ranging from -40°C to 175°C.
The RGW00TS65HRC11 is housed in a TO-247N package for through-hole mounting.
The maximum collector emitter saturation voltage is 1.9 V.
Yes, it is AEC-Q101 qualified, confirming its suitability for automotive applications.
The maximum gate emitter voltage is ±30 V.
This model features an N-channel design.
It is suitable for use in industrial inverters, DC-DC converters, and power factor correction circuits.
The field stop trench structure improves switching performance and reduces losses, enhancing efficiency.
The country of origin for this IGBT is India.
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