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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGW60TS65EHRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 178W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
ROHM RGW60TS65EHRC11 is a N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching. It is packaged in a 3-pin TO-247N form factor with through-hole mounting, ensuring ease of integration in various electronic assemblies.
This IGBT supports a maximum continuous collector current of 30 A and can withstand a collector-emitter voltage of 650 V, making it suitable for power electronics applications requiring robust performance under high voltage and current conditions.
Its low collector-emitter saturation voltage of 1.9 V reduces conduction losses, contributing to overall system efficiency in industrial inverters, DC-DC converters, and power factor correction circuits. The device can operate reliably in harsh environments with an operating temperature range from -40°C to 175°C and switching speeds up to 1 MHz, supporting high-frequency applications.
The device conforms to the AEC-Q101 automotive standard, indicating suitability for automotive electronics that demand stringent quality and reliability. Additionally, it features Pb-free lead plating and compliance with RoHS directives, supporting environmentally friendly manufacturing practices.
Supports a maximum continuous collector current of 30 amperes. Handles a maximum collector-emitter voltage of 650 volts for high voltage applications. TO-247N package with through-hole mounting ensures reliable mechanical and electrical connections.
Low saturation voltage of 1.9 volts reduces power loss and heat generation. Wide operating temperature range from -40°C to 175°C for industrial and automotive use. High-speed switching capability up to 1 MHz for efficient power control.
±30 V maximum gate-emitter voltage supports robust gate control. AEC-Q101 qualification certifies automotive-grade reliability and quality. Environmentally compliant with Pb-free plating and RoHS standards.
This N-Channel IGBT is ideal for use in automotive electronics, industrial inverter circuits, DC-DC converters, power factor correction devices, and other high-performance power switching applications. Its combination of voltage, current handling, and switching speed makes it a versatile and efficient choice for demanding electrical systems.
Explore more semiconductor components in the Electronics & Electricals category at EnvMart to complement your application needs.
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