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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STGF3NC120HD |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 6A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 25W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Infineon IKA08N65H5XKSA1 IGBT, 10.8 A 650 V, 3-Pin TO-220FP, Through HoleBrand | Infineon |
STMicroelectronics STGF3NC120HD is a high-efficiency N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This device combines the simple gate drive characteristics of MOSFETs with the high-current handling and low saturation voltage capabilities of bipolar transistors. Packaged in a 3-pin TO-220 through hole form factor, it offers reliable and easy mounting on printed circuit boards.
The STGF3NC120HD supports a maximum continuous collector current (Ic) of 6 amperes and a maximum collector-emitter voltage (Vceo) of 1200 volts. It can dissipate up to 25 watts of power, ensuring effective thermal management for demanding industrial and electronic control systems.
Its fast switching speed of up to 1 MHz makes it suitable for applications in motor drives, inverters, and power converters used in manufacturing, HVAC, and renewable energy systems. The device operates efficiently across a wide temperature range from -55°C to 150°C, further enhancing reliability in harsh environmental conditions.
The compact package dimensions of 10.4 mm length, 16.4 mm height, and 4.6 mm width facilitate its use in space-constrained designs. The maximum gate-emitter voltage rating of 20 volts protects the device in gate drive circuits, while a low maximum collector-emitter saturation voltage of 2.8 volts improves overall circuit efficiency and reduces heat generation.
As a through-hole mounted semiconductor, the STGF3NC120HD is designed for mechanical robustness and ease of integration in prototyping and production environments. It does not carry specific automotive certifications but meets industrial standards for discrete power semiconductors.
This IGBT features a maximum power dissipation of 25 watts for efficient thermal handling. It operates reliably between temperatures of -55°C to 150°C, suitable for industrial environments. The device provides a maximum gate-emitter voltage of 20 volts and a collector-emitter saturation voltage of 2.8 volts.
Compact dimensions of 10.4 mm length, 16.4 mm height, and 4.6 mm width allow space-saving PCB layouts. Designed for fast switching with a frequency of up to 1 MHz, ideal for power electronics applications. The standard through-hole mounting ensures robust mechanical stability in assembly.
This product is well-suited for use in industrial electronics, power management circuits, manufacturing automation, and HVAC controls.
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