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STMicroelectronics N-Channel IGBT 6 A 1200 V, 3-Pin TO-220 Through Hole STGF3NC120HD

Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 16.4mm
Length 10.4mm
Model STGF3NC120HD
Width 4.6mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 6A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V
Channel Type N
Maximum Power Dissipation Pd 25W
Maximum Gate Emitter Voltage VGEO 20 V
Infineon IKA08N65H5XKSA1 IGBT, 10.8 A 650 V, 3-Pin TO-220FP, Through HoleBrand Infineon

Key Features

  • This IGBT features a maximum power dissipation of 25 watts for efficient thermal handling.
  • It operates reliably between temperatures of -55°C to 150°C, suitable for industrial environments.
  • The device provides a maximum gate-emitter voltage of 20 volts and a collector-emitter saturation voltage of 2.8 volts.
  • Compact dimensions of 10.4 mm length, 16.4 mm height, and 4.6 mm width allow space-saving PCB layouts.
  • Designed for fast switching with a frequency of up to 1 MHz, ideal for power electronics applications.
  • The standard through-hole mounting ensures robust mechanical stability in assembly.

Product Description

STMicroelectronics STGF3NC120HD is a high-efficiency N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This device combines the simple gate drive characteristics of MOSFETs with the high-current handling and low saturation voltage capabilities of bipolar transistors. Packaged in a 3-pin TO-220 through hole form factor, it offers reliable and easy mounting on printed circuit boards.

The STGF3NC120HD supports a maximum continuous collector current (Ic) of 6 amperes and a maximum collector-emitter voltage (Vceo) of 1200 volts. It can dissipate up to 25 watts of power, ensuring effective thermal management for demanding industrial and electronic control systems.

Its fast switching speed of up to 1 MHz makes it suitable for applications in motor drives, inverters, and power converters used in manufacturing, HVAC, and renewable energy systems. The device operates efficiently across a wide temperature range from -55°C to 150°C, further enhancing reliability in harsh environmental conditions.

The compact package dimensions of 10.4 mm length, 16.4 mm height, and 4.6 mm width facilitate its use in space-constrained designs. The maximum gate-emitter voltage rating of 20 volts protects the device in gate drive circuits, while a low maximum collector-emitter saturation voltage of 2.8 volts improves overall circuit efficiency and reduces heat generation.

As a through-hole mounted semiconductor, the STGF3NC120HD is designed for mechanical robustness and ease of integration in prototyping and production environments. It does not carry specific automotive certifications but meets industrial standards for discrete power semiconductors.

This IGBT features a maximum power dissipation of 25 watts for efficient thermal handling. It operates reliably between temperatures of -55°C to 150°C, suitable for industrial environments. The device provides a maximum gate-emitter voltage of 20 volts and a collector-emitter saturation voltage of 2.8 volts.

Compact dimensions of 10.4 mm length, 16.4 mm height, and 4.6 mm width allow space-saving PCB layouts. Designed for fast switching with a frequency of up to 1 MHz, ideal for power electronics applications. The standard through-hole mounting ensures robust mechanical stability in assembly.

This product is well-suited for use in industrial electronics, power management circuits, manufacturing automation, and HVAC controls.

STMicroelectronics N-Channel IGBT 6 A 1200 V, 3-Pin TO-220 Through Hole STGF3NC120HD
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Frequently Asked Questions

The maximum continuous collector current (Ic) for this model is 6 amperes.

This IGBT has a maximum collector-emitter voltage (Vceo) rating of 1200 volts.

It can dissipate up to 25 watts of power, ensuring effective thermal management.

The device operates reliably between temperatures of -55°C to 150°C.

The maximum gate-emitter voltage (VGEO) is 20 volts.

The dimensions are 10.4 mm in length, 16.4 mm in height, and 4.6 mm in width.

The maximum collector-emitter saturation voltage (VceSAT) is 2.8 volts.

It is designed for fast switching with a frequency of up to 1 MHz.

This model uses a standard through-hole mounting type.

It is suitable for power electronics applications such as motor drives, inverters, and power converters.

The STGF3NC120HD has a pin count of 3.

The package type is TO-220.

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