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Vishay N-Channel IGBT Power Transistor 600V 47A 379W TO-247AC Package SIHG47N60EF-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Length | 16.25mm |
| Model | SIHG47N60EF-GE3 |
| Width | 15.87mm |
| Series | EF |
| Energy Rating | 1500mJ |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 379W |
| Maximum Gate Emitter Voltage VGEO | 30 V |
Key Features
- Equipped with a TO-247AC package ensuring robust mechanical and thermal characteristics.
- Supports a maximum drain current of 47A for demanding applications.
- Maximum drain to source voltage of 600 V suitable for high voltage switching.
- Features a gate emitter voltage rating up to 30 V for enhanced control and safety.
- Operates efficiently across a wide temperature range from -55°C to 150°C.
- Designed with a low drain to source resistance (RDS(on)) of 0.065 ohms at 10 VGS minimizing conduction losses.
- Includes a fast body diode integrated within E series technology for improved switching performance.
- Energy rating of 1500 mJ assists in absorbing energy surges during operation.
Product Description
Vishay SIHG47N60EF-GE3 N-Channel Insulated Gate Bipolar Transistor (IGBT) is a high-performance power semiconductor device built in a durable TO-247AC package designed for efficient power switching applications. It handles a maximum power dissipation of 379 watts and supports a drain to source voltage of 600 volts, enabling it to be used in industrial, commercial, and automotive power electronics.
This IGBT features a maximum continuous drain current of 47 amperes and a gate emitter voltage rating of 30 volts, providing stable operation and precise control in switching circuits. Its low on-resistance (RDS(on)) of 0.065 ohms at 10 VGS reduces power losses, boosting overall system efficiency.
With an operating temperature range from -55°C to 150°C and an energy rating of 1500 mJ, the SIHG47N60EF-GE3 is suitable for robust industrial environments where temperature variance and energy surges occur. The integrated fast body diode using Vishay's E series technology ensures rapid switching with reduced transient recovery time, enhancing device reliability.
The device meets RoHS compliance, reflecting Vishay's commitment to environmental safety. Key technical specifications include a length of 16.25 mm and a width of 15.87 mm, facilitating integration into various PCB designs.
The SIHG47N60EF-GE3 transistor is commonly applied in inverter systems, motor drives, power supplies, and renewable energy installations within manufacturing, industrial automation, and energy sectors.
TO-247AC package for enhanced thermal and mechanical strength. 600 V drain to source voltage enabling high voltage applications. Maximum continuous current rating of 47 A for demanding load conditions. Low drain to source on-resistance (0.065 ohms at 10 VGS) for energy efficient switching.
Wide operating temperature range from -55°C up to 150°C for industrial reliability. Integrated fast body diode using E series technology for fast switching performance. Energy rating of 1500 mJ to handle transient energy loads.
RoHS compliant device supporting environmentally safe manufacturing. Compact dimensions of 16.25 mm length and 15.87 mm width for space-conscious designs.
Explore a wide range of Vishay power semiconductors and discrete devices in EnvMart's Electronics & Electricals category for quality solutions tailored to your technical and industrial requirements.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SIHG47N60EF-GE3 is 47A, making it suitable for demanding load conditions.
This model supports a maximum drain to source voltage of 600V, which is suitable for high voltage applications.
The SIHG47N60EF-GE3 has an energy rating of 1500 mJ, allowing it to handle transient energy loads effectively.
It operates efficiently across a wide temperature range from -55°C to 150°C, suitable for various industrial environments.
The Vishay SIHG47N60EF-GE3 is housed in a TO-247AC package, which provides robust mechanical and thermal characteristics.
The maximum gate emitter voltage rating for this model is 30V, enhancing control and safety in switching applications.
This transistor has a length of 16.25 mm and a width of 15.87 mm, facilitating integration into various PCB designs.
The low drain to source on-resistance (RDS(on)) is 0.065 ohms at 10 VGS, which minimizes conduction losses.
Yes, it features an integrated fast body diode using E series technology, which enhances switching performance.
Yes, the SIHG47N60EF-GE3 is RoHS compliant, reflecting Vishay's commitment to environmental safety.
This transistor is commonly applied in inverter systems, motor drives, power supplies, and renewable energy installations.
The maximum power dissipation for the Vishay SIHG47N60EF-GE3 is 379 watts, allowing for efficient power handling in applications.
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