World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

ROHM 950 nm Infrared Emitting Diode DIP Through Hole Package SIR-56ST3F

Free Delivery in India | Lowest Global Shipping Charges

ROHM 950 nm Infrared Emitting Diode DIP Through Hole Package SIR-56ST3F

Name: ROHM 950 nm Infrared Emitting Diode DIP Through Hole Package SIR-56ST3F
Brand: ROHM
SKU: 420644
Price: 0.9 USD
Availability: InStock



Category Diode Brand ROHM Condition New

Specifications

Country of Origin	Japan
Brand	ROHM
Model	SIR-56ST3F
Packaging	Bulk
Mount Type	Through Hole
Number Of Leds	1
Package Type	DIP
Number of Pins	2
Lens Shape	Round
Maximum Supply Voltage	1.6V
Peak Wavelength	950nm
LED Material	GaAs
Angle of half intensity	15°
Radiant Intensity	8mW/sr

Key Features

This diode features a radiant intensity of 8 mW/sr for efficient emission.
The package type is DIP with a through-hole mount for easy PCB integration.
It has a narrow angle of half intensity at 15 degrees for focused IR output.
The LED is constructed using Gallium Arsenide (GaAs) material for high performance.
The device operates at a maximum supply voltage of 1.6 V.
It includes 1 LED with 2 pins and a round lens shape for consistent optics.
The product is supplied in bulk packaging suitable for manufacturing needs.
Manufactured in Japan ensuring high quality standards.

Product Description

ROHM SIR-56ST3F is a high-quality infrared (IR) emitting diode designed for applications requiring precise IR transmission at a peak wavelength of 950 nm. This IR LED comes in a standard Dual In-line Package (DIP) with through-hole mounting, facilitating robust assembly on printed circuit boards (PCBs).

With a radiant intensity of 8 mW/sr and a narrow 15° angle of half intensity, this component delivers focused infrared light, ideal for use in remote controllers, optical sensors, and other industrial or consumer electronic devices where accurate IR signal transmission is critical.

The LED is fabricated from Gallium Arsenide (GaAs), a semiconductor material known for its efficiency in IR emission. Its round lens design enhances the emission pattern, while the 2-pin configuration ensures stable electrical connection in through-hole mounting applications.

This product is supplied in bulk form, making it suitable for manufacturers and service providers who require large quantities for mass production. It is built to meet high reliability standards and is manufactured in Japan, a country renowned for quality semiconductor manufacturing.

ROHM’s optical sensors, including this IR diode, are extensively used in various industrial sectors such as electronics assembly, HVAC control systems, automation, and laboratory equipment where precise motion detection or remote sensing is essential.

This Diode features a radiant intensity of 8 mW/sr for efficient emission. The package type is DIP with a through-hole mount for easy PCB integration. It has a narrow angle of half intensity at 15 degrees for focused IR output.

The LED is constructed using Gallium Arsenide (GaAs) material for high performance. The device operates at a maximum supply voltage of 1.6 V. It includes 1 LED with 2 pins and a round lens shape for consistent optics. The product is supplied in bulk packaging suitable for manufacturing needs.

Manufactured in Japan ensuring high quality standards. Explore our comprehensive ROHM component categories at EnvMart for related semiconductor and optoelectronic devices.