Toshiba 100 mA NPN Small Signal Bipolar Transistor 120 V 3-Pin SOT-323 2SC4117-GR(TE85L,F

Toshiba 2SC4117-GR(TE85L,F is a small signal NPN bipolar transistor featuring a maximum collector current of 100 mA and a collector-emitter voltage rating of 120 V. This transistor is housed in a compact 3-pin SOT-323 package suitable for surface mounting on printed circuit boards. It offers a minimum DC current gain (hFE) of 200 and a maximum power dissipation of 100 mW, making it ideal for low power amplification and switching applications.

Designed for reliable operation, the device supports a maximum operating temperature of 125°C with a maximum transition frequency (ft) of 100 MHz, enabling effective performance in high-frequency circuits. Its small form factor with dimensions approximately 2 mm in length, 2.1 mm in width, and 1.05 mm in height facilitates use in densely packed electronic assemblies.

This transistor is widely used in electronic, electrical, and industrial applications including signal amplification, switching, and high frequency signal processing in consumer electronics, industrial control equipment, and instrumentation.

Maximum collector current 100 mA for reliable signal amplification. Collector to emitter voltage withstand of 120 V suitable for moderate voltage applications. Compact 3-pin SOT-323 surface mount package for space-saving PCB design.

High DC gain (hFE) of 200 ensures efficient amplification. Low power dissipation of 100 mW ideal for small signal circuits. NPN polarity for compatibility with common transistor designs. Operational stability up to 125°C maximum temperature.

High frequency switching capability at 100 MHz transition frequency.

This transistor is manufactured in Japan ensuring premium quality and reliable performance. It is well-suited for industrial, laboratory, and commercial electronics applications. Explore more Toshiba Bipolar Transistors on EnvMart for diverse design needs.