onsemi PNP Power Transistor 16 A, 250 V, 200 W, 3-Pin TO-264 MJL21193G

The onsemi MJL21193G is a robust PNP power transistor designed for demanding electronic and industrial applications, capable of handling up to 16 A collector current and 250 V collector-emitter voltage. Encased in a TO-264 package, it uses through-hole mounting suitable for rugged mounting on printed circuit boards.

This transistor supports a substantial maximum power dissipation of 200 W, making it ideal for power amplifier circuits, motor controls, and power regulation applications in industrial, laboratory, and electronic manufacturing environments.

Operating efficiently within a temperature range of -65°C to 150°C, the device assures reliability under harsh operating conditions. Its maximum transition frequency of 1 MHz facilitates operation in moderate frequency switching and amplification.

The device features a PNP single transistor configuration with 3 pins arranged for easy integration. The physical dimensions are 47.8 mm in height, 20.3 mm in length, and 5.3 mm in width, providing compatibility with standardized component layouts.

With a maximum collector base voltage of 400 V and emitter base voltage of 5 V, this transistor is suited for demanding voltage environments. Although it lacks specific automotive qualifications, the series MJL21193 is known for reliability in general-purpose power applications.

Originating from Korea, Republic of, the MJL21193G transistor combines performance and durability. Engineers in sectors including power electronics, HVAC systems, manufacturing equipment, and electronic component design will find it a valuable component.

Supports a maximum power dissipation of 200 watts for high-power applications. Features a single transistor configuration with PNP polarity for various electronic circuits. Operates reliably at temperatures ranging from -65°C to 150°C.

Has a maximum transition frequency of 1 MHz suitable for switching tasks. Includes 3 pins and dimensions of 47.8 mm height, 20.3 mm length, and 5.3 mm width. Rated max collector base voltage of 400 V and emitter base voltage of 5 V.

Manufactured in Korea ensuring quality and performance consistency.

For further exploration of onsemi semiconductor products and bipolar transistors, browse the Electronics & Electricals > Discrete Semiconductors > Bipolar Transistors category on EnvMart.