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Infineon HEXFET P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN, IRLHS2242TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.95mm |
| Length | 2.1mm |
| Model | IRLHS2242TRPBF |
| Width | 2.1mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 53mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 9.6W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | -1.2V |
Key Features
- Handles continuous drain current up to 7.2 A for demanding applications.
- Features a maximum drain-source voltage of 20 V for wide compatibility.
- Low Rds(on) for reduced conduction losses and minimal heat generation.
- Surface-mount PQFN packaging ensures reliable integration in modern PCBs.
- Wide operating temperature range from -55°C to 150°C for robust performance.
- Enhancement mode design enables versatile circuit configurations.
- Suited for power management, load switching, and automation systems.
Product Description
The Infineon IRLHS2242TRPBF is a P-Channel MOSFET featuring advanced HEXFET technology, designed for efficient switching and power management tasks. With a maximum continuous drain current of 7.2 A and a maximum drain-source voltage of 20 V, this device provides robust performance in a variety of demanding electronic applications.
This MOSFET employs a low on-resistance (Rds(on)) of 53 mΩ, which ensures low conduction losses and reduced thermal buildup during operation. Integrated within a compact 6-pin PQFN surface-mount package, it offers exceptional board space efficiency and is ideal for dense PCB layouts in modern electronic devices.
Operating reliably across extreme environments, the IRLHS2242TRPBF supports a temperature range from -55°C to 150°C. Its enhancement mode configuration enables flexible design approaches for system and load switching, charge/discharge mechanisms in battery management systems, and high-frequency switching in control circuits.
Thermal management is further bolstered by a maximum power dissipation of 9.6 W and a low typical gate charge, permitting high-speed switching suitable for advanced automation, electrical control, and power distribution systems. The device’s forward voltage and gate-source voltage parameters allow for stable operation while ensuring design safety.
Overall, this P-Channel MOSFET from Infineon is a reliable solution for designers seeking high efficiency, compact size, and robust electrical performance for industrial, automation, and energy management applications.
Explore more high-performance MOSFETs and semiconductor solutions within the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.2 A.
It has a maximum drain-source voltage of 20 V.
The maximum drain-source resistance (Rds(on)) is 53 mΩ.
The operating temperature range is from -55°C to 150°C.
This model uses a 6-pin PQFN surface-mount package.
The typical gate charge (Qg) at Vgs is 12 nC.
The maximum power dissipation for this model is 9.6 W.
It features a P-channel type configuration.
The forward voltage (Vf) is -1.2 V.
This model is designed for surface mounting.
It belongs to the HEXFET series.
The dimensions are 2.1 mm in length and width, with a height of 0.95 mm.
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