Taiwan Semiconductor N-Channel MOSFET, 60 V, 50 A, 28mΩ Rds, Enhancement Mode, 4-Pin TO-252 TSM230N06CP ROG

Taiwan Semiconductor TSM230N06CP ROG is a high-performance N-Channel MOSFET designed for power applications with a continuous drain current rating of 50 Amperes and a maximum drain-source voltage of 60 Volts. It features an enhancement mode channel for effective transistor switching in electronic circuits.

This MOSFET is housed in a 4-pin TO-252 surface-mount package that offers compact size with dimensions approximately 6.5 mm in length, 5.8 mm in width, and 2.3 mm in height, suited for space-constrained applications. It has a low on-resistance of 28 milliohms, ensuring minimal conduction losses and high efficiency in power management systems.

With a maximum power dissipation of 53 Watts, it can handle significant power loads while maintaining stable operation within an ambient temperature range from -55°C to 150°C. The device supports a maximum gate-source voltage of 20 Volts and has a typical gate charge of 28 nano-Coulombs allowing for fast switching speed for use in high-frequency circuits.

Additional attributes include a forward voltage drop of 1 Volt which contributes to energy-saving in conduction mode. The MOSFET complies with IEC 61249 automotive standards, confirming its suitability for automotive and industrial applications demanding reliability and durability.

This component is ideal for industrial electronics, power supplies, motor drivers, and other applications requiring efficient power switching and control. Its robust specification supports various sectors including manufacturing equipment, HVAC systems, and commercial electronics.

Enhancement mode channel type ensures reliable switching performance. Low maximum drain-source resistance of 28 milliohms reduces conduction losses. High maximum power dissipation rating at 53 Watts supports demanding applications.

Operates safely across a wide temperature range from -55°C to 150°C. Compact device dimensions suitable for high-density electronic circuits. Typical gate charge of 28 nC enables fast switching capabilities. Forward voltage voltage drop of 1 Volt reduces power loss during conduction.

Package type TO-252 facilitates efficient heat dissipation and mechanical stability. Explore a broad selection of Taiwan Semiconductor MOSFETs and power semiconductors on EnvMart for industrial, electronic, and commercial applications.