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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | FDP3682 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 36mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 95W |
| Typical Gate Charge Qg @ Vgs | 18.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
onsemi FDP3682 PowerTrench N-Channel MOSFET is a robust enhancement mode transistor with a maximum continuous drain current of 6 Amperes and a drain-source voltage rating of 100 Volts. Packaged in a compact 3-pin TO-220 through-hole type, this device is engineered to ensure reliable power switching and efficient performance in various electronic circuits.
The transistor’s low drain-source resistance of 36 milliohms reduces conduction losses, making it suitable for high-efficiency power management applications. Its power dissipation capability of 95 Watts allows it to handle significant load currents safely.
Designed to operate in harsh environments, it supports a wide operating temperature range from -55 degrees Celsius to 175 degrees Celsius. The maximum gate-source voltage rating of -20 V to +20 V enhances its switching durability and reliability.
Typical gate charge of 18.5 nanocoulombs ensures fast switching speed which is essential for modern power electronics. The compact dimensions (10.67 mm length, 4.83 mm width, 9.4 mm height) facilitate easy integration into electronic assemblies and circuit boards.
This MOSFET finds extensive use in industrial, laboratory, and commercial power control applications where precise power regulation and efficient switching are necessary. Its PowerTrench technology embodies low on-resistance and thermal efficiency.
The device supports a continuous drain current of 6 A for steady operation. It is housed in a standard TO-220 through-hole package for compatibility with various mounting options. Operating temperature range from -55°C to 175°C provides durability under diverse conditions.
Low drain-source resistance (36 mΩ) minimizes power dissipation during conduction. Gate charge specifications ensure rapid and efficient switching performance. Forward voltage drop of 1.25 V delivers effective conduction characteristics.
Dimensions support compact design integration in electronic modules. Suitable for applications in power management, industrial controls, and electronic switching circuits. Explore the Electronics & Electricals > Semiconductor > MOSFET category on EnvMart for a complete range of high-quality MOSFETs and complementary semiconductor devices.
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