Nexperia N-Channel MOSFET 360 mA, 60 V Enhancement, 3-Pin SOT-23 Package BSS138P,215

Nexperia BSS138P,215 is an N-Channel MOSFET transistor designed for efficient low-power switching applications. It features a maximum continuous drain current of 360 mA and a maximum drain-source voltage of 60 V, making it suitable for various electronic circuits requiring reliable switching capability.

Encased within a compact 3-pin SOT-23 surface-mount package, this device offers a low maximum drain-source resistance of 1.6 ohms, improving efficiency and heat dissipation. The device operates using enhancement mode and supports a gate-source voltage range from -20 to +20 V.

The MOSFET supports a maximum power dissipation of 420 mW, with operational temperatures spanning from -55°C minimum to 150°C maximum, ensuring stable performance even under demanding environmental conditions. The typical gate charge of 0.72 nC reduces switching losses, and the forward voltage drop of 1.1 V contributes to efficient conduction in switching circuits.

Its compact dimensions (3 mm length, 1.4 mm width, and 1 mm height) make it ideal for dense circuit board layouts. This part meets the automotive industry AEC-Q101 reliability standard and is manufactured in China with industry-standard semiconductor processes.

This MOSFET transistor is commonly utilized in industrial electronics, automotive electronics systems, power management circuits, consumer electronics, and other applications where efficient switching of low voltages and currents is essential. It supports automated manufacturing processes with its surface mount design and standard pin count, enhancing production efficiency.

Supports maximum continuous drain current of 360 mA. Maximum drain-source voltage rating is 60 volts. Package type is compact 3-pin SOT-23 for surface mounting. Low maximum drain-source resistance of 1.6 ohms ensures efficient switching.

Operates over temperature range from -55°C to 150°C. Maximum power dissipation is rated at 420 mW suitable for low-power applications. Typical gate charge of 0.72 nC minimizes switching losses. Forward voltage drop is 1.1 V for efficient conduction.

Complies with automotive AEC-Q101 standard for reliability. Physical dimensions include 3 mm length, 1.4 mm width, and 1 mm height. Manufactured in China with high-quality semiconductor processes.

Explore the Electronics & Electricals category on EnvMart for an extensive selection of semiconductor and MOSFET components for industrial, automotive, and commercial applications from leading brands like Nexperia.