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Toshiba N-Channel MOSFET, 340 A, 40 V Enhancement, 8-Pin SOP TPHR8504PL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 950μm |
| Length | 5mm |
| Model | TPHR8504PL |
| Width | 5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 340A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 103nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Supports a maximum continuous drain current of 340 amperes.
- Maximum drain-source voltage rating of 40 volts for reliable performance.
- Features enhancement mode channel operation with a gate source voltage up to 20 volts.
- Low drain-source on-resistance of 1.4 milliohms enhances efficiency.
- Small gate charge of 103 nanocoulombs at gate source voltage.
- Capable of dissipating up to 170 watts of power.
- Operates within a wide temperature range from -55°C to 175°C.
- Compact dimensions with 5mm width, 5mm length, and 950μm height.
Product Description
Toshiba TPHR8504PL is a high-efficiency N-Channel MOSFET designed for use in industrial and electronic semiconductor applications. It supports a maximum continuous drain current of 340 A and a drain-source voltage of 40 V, making it suitable for power conversion and high-performance switching circuits.
This device features an 8-pin SOP package and is surface mount compatible, with compact dimensions of 5 mm by 5 mm by 950 μm. The enhancement mode channel operation ensures reliable switching performance with a maximum gate source voltage of 20 V. Its low drain-source on-resistance of 1.4 milliohms reduces power losses and improves efficiency in DC-DC converters, motor drivers, and switching voltage regulators.
Operating over a wide temperature range from -55°C to 175°C, it delivers robust performance in harsh environments. The MOSFET exhibits a small gate charge of 103 nC and typical small output charge of 85.4 nC, enabling fast switching and minimal power loss. Leakage currents are minimal at 10 μA maximum, ensuring energy efficiency.
Additional technical benefits include a forward voltage of -1.2 V and a maximum power dissipation rating of 170 W. This device is not certified for automotive standards but excels in industrial, laboratory, and manufacturing electronics applications requiring high current and voltage control.
Supports a maximum continuous drain current of 340 amperes. Maximum drain-source voltage rating of 40 volts for reliable performance. Features enhancement mode channel operation for precise switching. Low drain-source on-resistance reducing power losses to 1.4 milliohms.
Small gate charge and output charge enable high-speed switching. Wide operating temperature range from -55°C to 175°C for durability. Compact 8-pin SOP surface-mount package for space-efficient PCB design. Ideal for high-efficiency DC-DC converters, motor drivers, and voltage regulators.
This Toshiba MOSFET model TPHR8504PL is a key component for electronics engineers engaged in power management, switching applications, and industrial system designs. Explore related semiconductor products within the EnvMart catalog for comprehensive component sourcing.
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Frequently Asked Questions
The Toshiba TPHR8504PL supports a maximum continuous drain current of 340 amperes.
This model has a maximum drain-source voltage rating of 40 volts.
It features a low drain-source on-resistance of 1.4 milliohms, which enhances efficiency.
The dimensions of this MOSFET are 5 mm in width, 5 mm in length, and 950 μm in height.
It operates within a wide temperature range from -55°C to 175°C.
This device can dissipate up to 170 watts of power.
The maximum gate-source voltage for this MOSFET is 20 volts.
The TPHR8504PL comes in an 8-pin SOP (Small Outline Package) for surface mounting.
It has a typical gate charge of 103 nanocoulombs at the specified gate-source voltage.
This model is suitable for high-efficiency DC-DC converters, motor drivers, and voltage regulators.
The forward voltage for this MOSFET is -1.2 volts.
This device features an N-channel type and operates in enhancement mode.
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