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DiodesZetex NPN Transistor 600 mA, 40 V, Single Configuration, SOT-523 Package MMBT2222AT-7-F

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 0.9mm
Length 1.7mm
Model MMBT2222AT-7-F
Width 1.75mm
Mount Type Surface
Series MMBT
Maximum Operating Temperature 150°C
Package Type SOT-523
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • This transistor supports a maximum power dissipation of 150 mW.
  • It has a high-frequency transition frequency of 300 MHz ensuring fast switching.
  • The device operates within a temperature range from -55°C to 150°C.
  • Minimal DC current gain begins at 35, suitable for amplification purposes.
  • Compact surface mount design (SOT-523) allows for efficient PCB layouts.
  • Automotive grade compliant, certified to AEC-Q101 standards.
  • It features maximum voltage ratings of 75 V (collector-base) and 6 V (emitter-base).

Product Description

DiodesZetex MMBT2222AT-7-F is a high-performance NPN bipolar transistor engineered for reliable operation in electronic applications demanding a maximum collector current of 600 mA and a durable collector-emitter voltage rating of 40 V. Incorporating a 3-pin SOT-523 surface mount package, this transistor offers space-saving and efficient mounting capabilities, crucial for compact designs in industrial, automotive, and consumer electronics.

Specifically designed for general-purpose switching and amplification, the MMBT2222AT-7-F maintains stable characteristics across its operating temperature range from -55°C to +150°C, aligned with automotive grade AEC-Q101 certification to assure high reliability under harsh environmental conditions.

Key electrical parameters include a minimum DC current gain (hFE) of 35, maximum power dissipation at 150 mW, and a transition frequency (fT) of 300 MHz enabling high-speed switching applications. Voltage ratings include a maximum collector-base voltage of 75 V and emitter-base voltage up to 6 V.

The compact dimensions of height 0.9 mm, length 1.7 mm, and width 1.75 mm facilitate integration into densely packed circuits. Its single transistor configuration makes it versatile for various circuits requiring NPN transistors of this specification and form factor.

This transistor is widely applicable in industrial controls, automotive electronics, communication devices, and consumer electronics requiring reliable bipolar transistor functions.

This transistor supports a maximum power dissipation of 150 mW. It has a high-frequency transition frequency of 300 MHz ensuring fast switching. The device operates within a temperature range from -55°C to 150°C. Minimal DC current gain begins at 35, suitable for amplification purposes.

Compact surface mount design (SOT-523) allows for efficient PCB layouts. Automotive grade compliant, certified to AEC-Q101 standards. It features maximum voltage ratings of 75 V (collector-base) and 6 V (emitter-base). Explore the extensive range of Bipolar Transistors on EnvMart to find ideal components for your electronic design needs.

DiodesZetex NPN Transistor 600 mA, 40 V, Single Configuration, SOT-523 Package MMBT2222AT-7-F
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Frequently Asked Questions

The maximum collector current for this model is 600 mA.

It operates within a temperature range from -55°C to +150°C.

The transition frequency is 300 MHz, enabling high-speed switching applications.

The maximum collector-base voltage is 75 V, and the maximum emitter-base voltage is 6 V.

It comes in a SOT-523 surface mount package, which is compact and efficient for PCB layouts.

The minimum DC current gain (hFE) is 35, making it suitable for amplification purposes.

This transistor supports a maximum power dissipation of 150 mW.

The dimensions are height 0.9 mm, length 1.7 mm, and width 1.75 mm.

Yes, it is certified to AEC-Q101 standards, ensuring high reliability in automotive applications.

It features a single transistor configuration, suitable for various circuits requiring NPN transistors.

The country of origin for the MMBT2222AT-7-F is India.

This model is widely applicable in industrial controls, automotive electronics, communication devices, and consumer electronics.

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