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DiodesZetex General Purpose PNP Transistor 1 A, 150 V, 3-Pin SOT-23 FMMT555TA

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model FMMT555TA
Width 2.5mm
Mount Type Surface
Series FMMT555
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -150V
Minimum DC Current Gain hFE 50
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -160V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc -1A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor is designed for use in general purpose amplification and switching applications.
  • It supports a maximum power dissipation of 500 mW ensuring robust performance.
  • The device operates within a wide temperature range from -55°C to 150°C for reliability in harsh environments.
  • Featuring a minimum DC current gain (hFE) of 50 and transition frequency up to 100 MHz for effective high-frequency operation.
  • Its compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height enable efficient PCB space usage.
  • The transistor complies with automotive standard AEC-Q101 ensuring suitability for automotive applications.
  • The package type is SOT-23 with a surface mount configuration and 3-pin count for easy assembly.
  • Maximum collector-base and emitter-base voltages are -160 V and -5 V respectively, offering good voltage tolerance.

Product Description

DiodesZetex FMMT555TA is a general purpose PNP bipolar transistor designed for amplification and switching in electronic circuits. Its 1 A maximum collector current and -150 V collector-emitter voltage rating make it suitable for low to medium power applications, delivering reliable performance.

Housed in a small 3-pin SOT-23 surface mount package, this transistor offers efficient PCB space utilization. The compact dimensions (3 mm length, 2.5 mm width, 1.1 mm height) facilitate dense board layouts and easy automated assembly.

Featuring a minimum DC current gain (hFE) of 50 and a maximum transition frequency of 100 MHz, it supports moderate gain and high-frequency applications. The transistor’s maximum power dissipation is 500 mW, allowing for efficient heat handling in typical use cases.

Designed to operate reliably within the extended temperature range of -55°C to 150°C and meeting the AEC-Q101 automotive quality standard, this device is well suited for automotive and industrial environments requiring durable components.

The transistor’s voltage tolerances include maximum collector-base voltage of -160 V and emitter-base voltage of -5 V, ensuring operational safety under diverse conditions. This transistor is ideal for industrial, automotive, and consumer electronics manufacturing.

It can be used in switching circuits, amplification stages, and general signal processing. Its surface mount design is compatible with automated PCB assembly lines for mass production.

Choose the DiodesZetex FMMT555TA transistor for a reliable, efficient, and compact solution in bipolar transistor applications. Explore more semiconductor components and Bipolar Transistors on EnvMart for your project needs.

DiodesZetex General Purpose PNP Transistor 1 A, 150 V, 3-Pin SOT-23 FMMT555TA
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Frequently Asked Questions

The maximum collector current for this model is -1 A.

The maximum collector-emitter voltage rating is -150 V.

This model has a minimum DC current gain (hFE) of 50.

The maximum transition frequency for this transistor is 100 MHz.

It has dimensions of 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

This transistor comes in a SOT-23 package type with a surface mount configuration and 3 pins.

The transistor operates within a temperature range of -55°C to 150°C.

It complies with the AEC-Q101 automotive standard.

The maximum power dissipation for this model is 500 mW.

The maximum collector-base voltage rating is -160 V.

This transistor is suitable for general purpose amplification and switching applications.

The maximum emitter-base voltage (VEBO) is -5 V.

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