onsemi Transistor NPN 50 mA 12 V 3-Pin SOT-23 MMBT5179

onsemi MMBT5179 transistor is a NPN type discrete semiconductor designed for use in low noise UHF/VHF amplifiers and low frequency drift, high output UHF oscillators. It operates with a maximum collector current of 50 mA and a collector-emitter voltage of 12 V, making it ideal for low power radio frequency amplification applications.

This transistor comes in a compact 3-pin SOT-23 surface mount package, which allows easy integration into modern PCB designs where space is limited. It features a maximum power dissipation of 225 mW and supports a high transition frequency of up to 100 MHz, providing effective performance in RF stages.

The device is capable of operating in harsh environmental conditions ranging from -55°C to 150°C, ensuring reliability in industrial and commercial electronics. Its minimum current gain (hFE) of 25 guarantees adequate amplification, while the transistor configuration is single NPN for common emitter or common base configurations.

Additional electrical limits include maximum collector base voltage of 20 V, maximum emitter base voltage of 2.5 V, and a pin count of 3. Dimensions of the transistor are approximately 2.92 mm in length, 1.3 mm in width, and 0.04 mm in height, highlighting its miniature design.

This transistor finds applications in industrial electronics, radar systems, communications, laboratory test equipment, and other electronic products requiring RF amplification or oscillator functions. It is a general-purpose semiconductor suitable for industrial, laboratory, and commercial electronic assemblies.

Maximum DC collector current of 50 mA supports low power amplification. Collector-emitter voltage rating of 12 V ensures suitability for low voltage circuits. Surface mount SOT-23 package with 3 pins for compact PCB layout.

High transition frequency up to 100 MHz for UHF/VHF amplifier applications. Designed for low noise UHF/VHF amplification with gain suitable for RF oscillators. Operating temperature range from -55°C to 150°C for reliable industrial use.

Maximum power dissipation of 225 mW for low thermal stress designs. Single transistor configuration with NPN polarity optimized for common emitter/base setups. Explore comprehensive selections of semiconductors and transistors in the Electronics & Electricals category at EnvMart for your industrial and electronics manufacturing needs.

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