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onsemi NPN Single Bipolar Transistor 8 A, 50 V, Surface Mount, 4-Pin TP-FA Package 2SC5707-TL-E

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.3mm
Length 6.7mm
Model 2SC5707-TL-E
Width 5.5mm
Mount Type Surface
Series 2SC5707
Maximum Operating Temperature 150°C
Package Type TP-FA
Pin Count 4
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 15W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This transistor features a 4-pin TP-FA surface mount package suitable for compact circuit designs.
  • Its maximum power dissipation is rated at 15 watts, supporting high-power applications.
  • With a minimum DC current gain (hFE) of 200, this device ensures effective amplification.
  • The transistor supports a maximum transition frequency of 1 MHz ideal for switching operations.
  • Rated to operate up to 150°C maximum temperature, suitable for industrial usage.
  • The device has maximum collector-base and emitter-base voltages of 100 V and 6 V respectively.
  • Designed as a general-purpose NPN transistor useful in various electronic semiconductor circuits.

Product Description

onsemi 2SC5707-TL-E is a high-power NPN bipolar transistor designed for surface mounting with a TP-FA 4-pin package. Rated at 8 A collector current and 50 V collector-emitter voltage, it provides robust switching and amplification performance for industrial electronics and power control applications.

This transistor supports a maximum power dissipation of 15 watts, enabling suitability for demanding load conditions and thermal management scenarios. With a minimum DC current gain (hFE) of 200, the device offers stable gain for signal amplification, complemented by a maximum transition frequency of 1 MHz that supports moderate frequency circuit operations.

The component is engineered to operate reliably up to 150°C, making it well-suited for industrial, electrical, and power semiconductor uses in harsh environments. Its surface mount TP-FA package optimizes board space for compact electronic systems.

With collector-base and emitter-base voltage ratings of 100 V and 6 V respectively, this transistor ensures protection against voltage stresses in switching circuits. Its compact dimensions (6.7 mm length x 5.5 mm width x 2.3 mm height) allow integration into space-restricted PCB layouts.

This transistor features a 4-pin TP-FA surface mount package suitable for compact circuit designs. Its maximum power dissipation is rated at 15 watts, supporting high-power applications. With a minimum DC current gain (hFE) of 200, this device ensures effective amplification.

The transistor supports a maximum transition frequency of 1 MHz ideal for switching operations. Rated to operate up to 150°C maximum temperature, suitable for industrial usage. The device has maximum collector-base and emitter-base voltages of 100 V and 6 V respectively.

Dimensions approximately 6.7 mm length, 5.5 mm width, and 2.3 mm height for space-constrained circuits. Designed as a general-purpose NPN transistor useful in various electronic semiconductor circuits.

This product is ideal for industrial electronics, power switching, and amplification tasks in manufacturing, automotive, and electrical circuit applications. For additional details and support, explore related Bipolar Transistors and onsemi semiconductor components in the EnvMart catalog.

onsemi NPN Single Bipolar Transistor 8 A, 50 V, Surface Mount, 4-Pin TP-FA Package 2SC5707-TL-E
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