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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.3mm |
| Length | 6.7mm |
| Model | 2SC5707-TL-E |
| Width | 5.5mm |
| Mount Type | Surface |
| Series | 2SC5707 |
| Maximum Operating Temperature | 150°C |
| Package Type | TP-FA |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi 2SC5707-TL-E is a high-power NPN bipolar transistor designed for surface mounting with a TP-FA 4-pin package. Rated at 8 A collector current and 50 V collector-emitter voltage, it provides robust switching and amplification performance for industrial electronics and power control applications.
This transistor supports a maximum power dissipation of 15 watts, enabling suitability for demanding load conditions and thermal management scenarios. With a minimum DC current gain (hFE) of 200, the device offers stable gain for signal amplification, complemented by a maximum transition frequency of 1 MHz that supports moderate frequency circuit operations.
The component is engineered to operate reliably up to 150°C, making it well-suited for industrial, electrical, and power semiconductor uses in harsh environments. Its surface mount TP-FA package optimizes board space for compact electronic systems.
With collector-base and emitter-base voltage ratings of 100 V and 6 V respectively, this transistor ensures protection against voltage stresses in switching circuits. Its compact dimensions (6.7 mm length x 5.5 mm width x 2.3 mm height) allow integration into space-restricted PCB layouts.
This transistor features a 4-pin TP-FA surface mount package suitable for compact circuit designs. Its maximum power dissipation is rated at 15 watts, supporting high-power applications. With a minimum DC current gain (hFE) of 200, this device ensures effective amplification.
The transistor supports a maximum transition frequency of 1 MHz ideal for switching operations. Rated to operate up to 150°C maximum temperature, suitable for industrial usage. The device has maximum collector-base and emitter-base voltages of 100 V and 6 V respectively.
Dimensions approximately 6.7 mm length, 5.5 mm width, and 2.3 mm height for space-constrained circuits. Designed as a general-purpose NPN transistor useful in various electronic semiconductor circuits.
This product is ideal for industrial electronics, power switching, and amplification tasks in manufacturing, automotive, and electrical circuit applications. For additional details and support, explore related Bipolar Transistors and onsemi semiconductor components in the EnvMart catalog.
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