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DiodesZetex High Voltage PNP Bipolar Transistor, -500 mA, -300 V, 4-Pin SOT-223 FZT757TA

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.7mm
Length 6.7mm
Model FZT757TA
Width 7.3mm
Mount Type Surface
Series FZT757
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -300V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -300V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Maximum DC collector current of -500 mA for moderate current handling.
  • Collector emitter voltage rating of -300 V ensuring high voltage tolerance.
  • Maximum power dissipation capacity of 2 watts for reliable thermal management.
  • Transistor configured as a single PNP type suitable for switch and amplifier circuits.
  • Compact SOT-223 package with 4 pins optimized for surface mount applications.
  • High temperature operating range from -55°C to 150°C for harsh environment performance.
  • Minimum DC current gain (hFE) of 40 providing adequate amplification.
  • Maximum transition frequency of 30 MHz supporting moderate frequency electronics.

Product Description

The DiodesZetex FZT757TA is a high voltage PNP bipolar transistor suitable for a broad range of electronic and industrial applications including power management, switching, and amplification. Featuring a maximum DC collector current of -500 mA and a collector emitter voltage of -300 V, this device offers robustness in handling moderate electrical loads with excellent voltage tolerance.

Its single transistor configuration in a compact 4-pin SOT-223 surface mount package enables easy integration into densely populated circuit boards. The transistor supports a maximum power dissipation of 2 watts, ensuring efficient thermal management during operation.

Designed to operate reliably in extreme environments, the transistor withstands temperatures from -55°C up to 150°C, making it suitable for automotive and industrial electronics requiring high durability. The device has a minimum DC current gain (hFE) of 40, which provides consistent amplification and switching performance, and it can operate at frequencies up to 30 MHz.

The transistor complies with the AEC-Q101 automotive standard, demonstrating its reliability for automotive electronics applications. Its compact form factor, approximately 7.3 mm in width, 6.7 mm in length, and 1.7 mm in height, allows for precise PCB layout considerations.

Maximum DC collector current of -500 mA. Collector emitter voltage of -300 V. Maximum power dissipation rating of 2 W. Single PNP transistor configuration. Surface mount 4-pin SOT-223 package. Operating temperature range from -55°C to 150°C.

Minimum DC current gain hFE of 40. Maximum transition frequency 30 MHz. Automotive standard AEC-Q101 compliant. Physical dimensions of 7.3 mm wide, 6.7 mm long, 1.7 mm high.

This transistor is ideal for use in electronic circuits within industrial, automotive, and power management systems, offering high voltage tolerance and reliable operation. Ideal for design engineers and manufacturers requiring a durable and compact high-voltage PNP transistor.

Explore our comprehensive selection of Bipolar Transistors and semiconductor components at EnvMart to optimize your project needs.

DiodesZetex High Voltage PNP Bipolar Transistor, -500 mA, -300 V, 4-Pin SOT-223 FZT757TA
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Frequently Asked Questions

The maximum DC collector current of the FZT757TA is -500 mA.

The collector emitter voltage rating for the FZT757TA is -300 V.

This transistor has a maximum power dissipation capacity of 2 watts.

The FZT757TA operates within a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) for the FZT757TA is 40.

The maximum transition frequency supported by the FZT757TA is 30 MHz.

The FZT757TA comes in a compact 4-pin SOT-223 surface mount package.

The physical dimensions of the FZT757TA are approximately 7.3 mm in width, 6.7 mm in length, and 1.7 mm in height.

The FZT757TA complies with the AEC-Q101 automotive standard.

The FZT757TA is configured as a single PNP transistor.

The maximum emitter base voltage (VEBO) for the FZT757TA is -5 V.

This transistor is suitable for power management, switching, and amplification applications in electronic circuits.

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