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Nexperia Resistor-Equipped NPN Transistor 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC123JQBZ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTC123JQBZ
Mount Type Surface
Series PDTC123J
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 230MHz

Key Features

  • Offers a maximum DC collector current of 100 mA.
  • Supports a maximum collector-emitter voltage of 50 V.
  • Features a low-profile DFN1110D-3 surface mount package with side-wettable flanks.
  • Incorporates built-in resistors to simplify circuit design and reduce component count.
  • Operates in temperature ranges from -55°C to 150°C.
  • Delivers a minimum DC current gain (hFE) of 100.
  • Complies with RoHS standards and automotive AEC-Q101 certification.
  • Suitable for controlling IC inputs and switching loads in digital circuits.

Product Description

The Nexperia PDTC123JQBZ is a resistor-equipped transistor (RET) with an NPN transistor configuration, capable of handling a maximum DC collector current of 100 mA and a collector-emitter voltage of 50 V. It is housed in an ultra-small DFN1110D-3 plastic surface mount package with side-wettable flanks, offering a low package height of 0.5 mm that lends itself well to automated assembly and optical inspection techniques.

This transistor incorporates built-in resistors, significantly simplifying the circuit design by reducing the number of external components required. This design approach reduces component count and the associated pick and place costs during manufacturing.

Operating within a temperature range of -55°C to 150°C, the PDTC123JQBZ supports robust performance across a variety of industrial and automotive environments. It complies fully with the RoHS directive and meets the stringent automotive industry AEC-Q101 standard, ensuring reliability in automotive and high-reliability electronic applications.

The device delivers a minimum DC current gain (hFE) of 100 and a maximum transition frequency (ft) of 230 MHz, making it well suited for high-frequency switching applications. It offers a maximum emitter base voltage of 5 V and a collector base voltage of 50 V, providing versatile voltage operation across various circuit topologies.

This transistor is commonly used for digital applications such as controlling integrated circuit inputs and switching loads efficiently, acting as a cost-saving alternative to the BC857 transistor series in similar roles.

Maximum DC Collector Current: 100 mA. Maximum Collector-Emitter Voltage: 50 V. Package Type: DFN1110D-3 low profile surface mount. Surface Mount Mounting. Built-in resistors to reduce component count. Operating temperature range from -55°C to 150°C.

Meets RoHS and AEC-Q101 automotive standards. Minimum DC current gain (hFE) of 100. Maximum transition frequency of 230 MHz. Pin count: 3.

This product is ideal for use in industrial, automotive, and digital electronics applications requiring compact, reliable transistor solutions with integrated resistors to optimize circuit design and assembly efficiency. Browse more Bipolar Transistors and electronic components from Nexperia and trusted brands on EnvMart.

Nexperia Resistor-Equipped NPN Transistor 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC123JQBZ
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