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Taiwan Semiconductor Small Signal NPN Bipolar RF Transistor 100 mA 65 V 3-Pin SOT-23 BC846B RF

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Taiwan Semiconductor Small Signal NPN Bipolar RF Transistor 100 mA 65 V 3-Pin SOT-23 BC846B RF

Name: Taiwan Semiconductor Small Signal NPN Bipolar RF Transistor 100 mA 65 V 3-Pin SOT-23 BC846B RF
Brand: Taiwan Semiconductor
SKU: 409938
Price: 0.04 USD
Availability: InStock

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Category Bipolar Transistor Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	India
Brand	Taiwan Semiconductor
Height	1.12mm
Length	3.04mm
Model	BC846B RF
Width	2.64mm
Mount Type	Surface
Series	BC846
Maximum Operating Temperature	150°C
Package Type	SOT-23
Pin Count	3
Maximum Collector Emitter Voltage Vceo	65V
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	250mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single

Key Features

Supports a maximum collector current of 100 mA for efficient signal control.
Collector-emitter voltage rating up to 65 V to ensure reliable operation.
Compact surface-mount SOT-23 package with 3 pins.
High minimum DC current gain (hFE) of 100 for improved amplification.
Maximum power dissipation of 250 mW suitable for low power applications.
NPN polarity with single transistor configuration.
Maximum operating temperature of 150°C enables use in demanding environments.
Maximum collector-base voltage of 80 V and emitter-base voltage of 6 V.

Product Description

Taiwan Semiconductor BC846B RF is a small signal NPN bipolar transistor optimized for radio frequency (RF) applications. It is designed for switching and amplification in low power circuits.

The transistor supports a maximum DC collector current of 100 mA and can withstand collector-emitter voltages up to 65 V, making it suitable for many electronics industrial circuits.

Housed in a compact 3-pin SOT-23 package, this device offers a high minimum DC current gain (hFE) of 100 and maximum power dissipation of 250 mW, ensuring efficient signal amplification with minimal heat generation.

The device configuration is single transistor, NPN polarity, with maximum collector-base voltage rating of 80 V and emitter-base voltage of 6 V, providing flexibility in circuit design.

It is surface mount technology (SMT) compatible for easy PCB installation and has a maximum operating temperature of 150°C, supporting robust industrial and commercial applications.

Supports a maximum collector current of 100 mA for efficient signal control. Collector-emitter voltage rating up to 65 V to ensure reliable operation. Compact surface-mount SOT-23 package with 3 pins. High minimum DC current gain (hFE) of 100 for improved amplification.

Maximum power dissipation of 250 mW suitable for low power applications. NPN polarity with single transistor configuration. Maximum operating temperature of 150°C enables use in demanding environments. Small dimensions: Length 3.04 mm, Width 2.64 mm, Height 1.12 mm.

Maximum collector-base voltage of 80 V and emitter-base voltage of 6 V. Surface mount mount type for easy PCB assembly.

This transistor is ideal for use in electronic devices requiring stable low power RF transistors such as amplifiers, switches, and general signal processing in industrial electronics, manufacturing, and communications equipment.

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