Taiwan Semiconductor N-Channel Enhancement Mode MOSFET, 50 A Continuous Drain Current, 60 V Drain-Source TSM230N06CP ROG

The Taiwan Semiconductor TSM230N06CP ROG N-Channel MOSFET is engineered for efficient power switching applications in industrial and electronic circuits. It supports a continuous drain current of 50 amperes and a maximum drain-source voltage of 60 volts, making it suitable for medium power applications. The device features an enhancement channel mode with a low on-resistance of 28 milliohms, minimizing power loss during conduction and improving overall circuit efficiency.

Housed in a TO-252 4-pin surface mount package, it offers a compact solution ideal for space-constrained electronic assemblies. The MOSFET can dissipate a maximum power of 53 watts and operates reliably within a wide temperature range from -55°C to 150°C, allowing for stable performance in harsh environments including industrial and automotive applications.

Designed with a typical gate charge of 28 nano-coulombs, the device enables fast switching speeds which are vital for power conversion and switching regulator circuits. It has a maximum gate-source voltage rating of 20 volts to ensure safe gate operation and prevent damage from voltage spikes. The forward voltage drop is approximately 1 volt, contributing to reduced conduction losses.

Certified to meet IEC 61249 automotive standards, this MOSFET is well-suited for automotive electronics requiring robust and durable semiconductor components. Its compact dimensions of 6.5 mm length, 5.8 mm width, and 2.3 mm height allow for efficient board space management.

Features a low on-resistance of 28 milliohms for efficient power handling. Comes in a compact TO-252 surface mount package with 4 pins. Supports a maximum power dissipation of 53 watts for robust operation. Operates reliably between -55°C and 150°C temperature range.

Has a typical gate charge of 28 nC enabling fast switching. Maximum gate-source voltage rating of 20 V ensures reliable gate control. Forward voltage drop of approximately 1 V reduces conduction losses. Complies with IEC 61249 automotive standard for durability.

This N-Channel Enhancement Mode MOSFET is ideal for use in industrial, automotive, power management, and discrete semiconductor applications where high efficiency and reliability are required. It is a preferred choice for switching power supplies, motor control circuits, and load switching in electronic devices.

EnvMart offers this reliable and high-performance Taiwan Semiconductor MOSFET TSM230N06CP ROG as part of its semiconductor components portfolio, serving customers in electronics manufacturing, repair, and design.