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Taiwan Semiconductor N-Channel MOSFET 55 A, 30 V, Enhancement Channel, 4-Pin TO-252 TSM090N03CP ROG

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Taiwan Semiconductor N-Channel MOSFET 55 A, 30 V, Enhancement Channel, 4-Pin TO-252 TSM090N03CP ROG

Name: Taiwan Semiconductor N-Channel MOSFET 55 A, 30 V, Enhancement Channel, 4-Pin TO-252 TSM090N03CP ROG
Brand: Taiwan Semiconductor
SKU: 398602
Price: 0.43 USD
Availability: InStock

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Category MOSFET Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	India
Brand	Taiwan Semiconductor
Height	2.3mm
Length	6.5mm
Model	TSM090N03CP ROG
Width	5.8mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	4
Automotive Standard	IEC 61249
Channel Type	N
Maximum Continuous Drain Current Id	55A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	40W
Typical Gate Charge Qg @ Vgs	7.5nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Enhancement mode with N-channel configuration for effective transistor operation.
Compact 4-pin TO-252 surface mount package suitable for PCB mounting.
Maximum power dissipation rating of 40 W for reliability under load.
Wide operating temperature range from -55°C to 150°C for versatile industrial use.
Low maximum drain source resistance of 13 milliohms for improved efficiency.
Typical gate charge of 7.5 nanocoulombs ensures fast switching response.
Maximum gate-source voltage of 20 V supports robust performance.
Forward voltage of 1 V under typical operating conditions.

Product Description

Taiwan Semiconductor TSM090N03CP ROG is a high-performance N-Channel MOSFET designed for power management applications in electronic components, power connectors, and semiconductor devices. With a maximum continuous drain current of 55 A and drain source voltage of 30 V, this device is suitable for robust switching tasks in various industrial, automotive, and electronics manufacturing environments.

Featuring an enhancement channel mode and a 4-pin TO-252 surface mount package, the MOSFET ensures compact design integration on PCBs while maintaining high power dissipation capabilities up to 40 W. Its low Rds(on) of 13 milliohms helps in minimizing conduction losses, enhancing overall efficiency in power circuits.

The device operates reliably over a broad temperature range from -55°C to 150°C, meeting demanding conditions in automotive and industrial applications. Its typical gate charge of 7.5 nC supports fast switching speeds, critical in high-frequency circuits. The maximum gate voltage rating is 20 V, and the forward voltage is around 1 V, keeping it within safe operating limits.

The MOSFET is manufactured according to IEC 61249 automotive standards, affirming its quality and suitability for automotive systems and other rigorous uses. This product is RoHS compliant, reflecting adherence to environmental and safety regulations.

Key applications of the TSM090N03CP ROG include power management in industrial electronics, automotive electronics control, and high-efficiency power supplies. Its surface mount design facilitates easy integration into modern compact electronic assemblies.

Enhancement mode N-channel configuration for efficient switching. Compact TO-252 package with 4 pins for PCB mounting. High continuous drain current and low Rds for power efficiency. Wide temperature range operation suitable for industrial and automotive use.

Meets IEC 61249 automotive quality standards. RoHS compliant for environmental safety. Explore the complete range of power MOSFETs at EnvMart to find components optimized for your specific industrial and electronic design needs.