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onsemi SUPERFET III N-Channel MOSFET 8 A 800 V 3-Pin TO-252 NTD600N80S3Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | NTD600N80S3Z |
| Width | 2.39mm |
| Mount Type | Surface |
| Series | SUPERFET III |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 15.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for efficient switching power applications reducing switching losses.
- Maximum continuous drain current of 8 Amperes allows robust load handling.
- High maximum drain source voltage of 800 Volts supports high voltage designs.
- Surface mount type with 3-pin TO-252 package enables compact PCB layouts.
- Maximum power dissipation of 60 Watts supports thermal heavy duty applications.
- Operates in temperature range from -55°C to 175°C for varied environments.
- Typical gate charge of 15.5nC ensures fast switching capability.
- Low maximum drain source resistance of 600 milliohms optimizes conduction losses.
Product Description
onsemi NTD600N80S3Z SUPERFET III N-Channel MOSFET is a high-performance transistor designed for switching power applications such as laptop adapters, audio systems, lighting, ATX power supplies, and industrial power devices. It supports a maximum continuous drain current of 8 Amperes and can handle drain source voltages up to 800 Volts.
The MOSFET comes in a surface mount TO-252 package with 3 pins, optimized for compact and efficient PCB integration. It features low on-resistance (600mΩ) and a maximum power dissipation of 60 Watts, enabling reliable operation under thermal stress.
This device offers enhanced electrostatic discharge (ESD) protection thanks to an integrated Zener diode, ensuring higher system reliability, especially at low operating temperatures ranging from -55°C to 175°C.
The typical gate charge of 15.5nC allows fast switching, reducing switching losses and improving efficiency in power conversion circuits.
ON Semiconductor's SUPERFET III series MOSFETs are ideal for industrial, commercial, and electronic power management applications, delivering compact, cooler, and more robust performance in demanding environments.
Efficient switching power transistor with low switching loss. Enhanced ESD protection for improved system reliability. Compact surface mount package suitable for high-density designs. Wide temperature range operation from -55°C to 175°C.
Optimized gate charge for high-speed switching applications.
This product is new and made in India by default unless otherwise specified. Suitable for electronics manufacturing, industrial automation, and power supply device design professionals. Explore more semiconductor and discrete components in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the NTD600N80S3Z is 8 Amperes.
It can handle a maximum drain source voltage of 800 Volts.
The typical gate charge is 15.5nC, which allows for fast switching capabilities.
The dimensions of the TO-252 package are 6.73mm in length, 2.39mm in width, and 6.22mm in height.
The maximum power dissipation for the NTD600N80S3Z is 60 Watts.
It operates in a temperature range from -55°C to 175°C.
This model uses a surface mount type with a 3-pin configuration.
The maximum gate source voltage is 20 Volts.
The maximum drain source resistance is 600 milliohms.
It is suitable for applications such as laptop adapters, audio systems, lighting, ATX power supplies, and industrial power devices.
This MOSFET belongs to the SUPERFET III series by onsemi.
The NTD600N80S3Z is manufactured in India.
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