Nexperia N-Channel MOSFET, 5.4 A, 20 V Enhancement 3-Pin SOT-23 PMV30UN2R

Nexperia PMV30UN2R N-Channel MOSFET offers a reliable switching solution optimized for portable electronic designs requiring low voltage operation and efficient power management. It is engineered using trusted Trench MOS technology to deliver low threshold voltage and very fast switching capabilities.

This transistor is packaged in a 3-pin SOT-23 surface-mounted device format, making it suitable for space-constrained applications in consumer electronics, LED drivers, and power management circuits. The device supports a maximum continuous drain current of 5.4 A and a maximum drain-source voltage of 20 V, with a maximum power dissipation rating of 5 W, ensuring robust performance.

The device operates effectively across a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial and commercial environments. Its typical gate charge of 6.2 nC at a specified gate voltage and a maximum gate-source voltage of 12 V facilitate efficient control in switching circuits.

The compact package dimensions (3 mm length, 1.4 mm width, and 1 mm height) allow integration into miniaturized PCB assemblies without sacrificing durability or thermal management. These features make the PMV30UN2R ideal for applications including LED drivers, power management, low-side load switches, and general switching circuits in industrial and commercial electronics.

Maximum continuous drain current of 5.4 A. Maximum drain-source voltage of 20 V. SOT-23 3-pin surface mount package. Enhancement mode N-channel FET using Trench MOSFET technology. Maximum power dissipation of 5 W. Operational temperature range from -55°C to 150°C.

Typical gate charge of 6.2 nC at Vgs. Maximum gate-source voltage of 12 V. Compact physical dimensions for dense PCB layouts. Manufactured in China. Explore more high-quality semiconductor components at EnvMart for all your industrial, laboratory, and commercial electronic applications.