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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 0.8mm |
| Length | 3.15mm |
| Model | DMC3016LDV |
| Width | 3.15mm |
| Mount Type | Surface |
| Series | DMC3016LDV |
| Maximum Operating Temperature | 150°C |
| Package Type | PDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 38mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 9.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Dual |
The DiodesZetex DMC3016LDV-7 is a dual N/P-channel MOSFET designed for efficient switching applications in modern electronic circuits. With its enhancement mode configuration, it combines both P-type and N-type channels within a single package, delivering versatility for advanced power control and level-shifting tasks.
This MOSFET offers a maximum continuous drain current of 21A and a drain-source voltage rating of 30V, suitable for medium to high current switching in embedded systems, power regulation, and DC-DC converters. Its low drain-source resistance of 38mΩ ensures minimal power losses and increased energy efficiency in operation.
Engineered for surface mount (SMD) technology, the DMC3016LDV-7 features the compact 8-Pin PDI3333 package, facilitating automated placement in high-volume PCB manufacturing and enabling tight layouts for space-constrained applications. The device is robust, with a maximum power dissipation of 1.8W and a wide operating temperature range from -55°C to 150°C, making it reliable for both industrial and commercial environments.
The dual configuration allows integration in circuits requiring both high-side and low-side switching, simplifying design complexity and reducing component count. Typical uses include power management modules, motor drivers, battery protection circuitry, and voltage level-shifting systems in industrial equipment and consumer electronics.
Its typical gate charge of 9.5nC (at Vgs) supports rapid switching, improving response times in high-frequency applications. The device accommodates a maximum gate-source voltage of 20V and a forward voltage of 0.7V, providing flexibility for various control schemes.
Construction ensures durability, with precise package dimensions of 3.15mm x 3.15mm x 0.8mm and dual elements per chip for redundant safety and improved electrical performance. It meets standard reliability requirements for electronic semiconductors, though it is not rated for automotive use or specific standards/approvals.
Industrial applications include power conversion modules, programmable power supplies, control systems, and smart devices requiring reliable MOSFET switching. Laboratory environments can benefit from its dual-channel versatility for prototype and test circuits, while commercial electronics designers will appreciate its efficient footprint and robust electrical characteristics.
Explore more advanced semiconductor solutions in the MOSFET category by DiodesZetex.
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