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DiodesZetex Dual MOSFET , 2 Element, P/N Channel, 21A 30V, Enhancement Mode, 8-Pin PDI3333 DMC3016LDV

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 0.8mm
Length 3.15mm
Model DMC3016LDV
Width 3.15mm
Mount Type Surface
Series DMC3016LDV
Maximum Operating Temperature 150°C
Package Type PDI3333
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 21A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 38mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.8W
Typical Gate Charge Qg @ Vgs 9.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.7V
Transistor Configuration Dual

Key Features

  • Suitable for switching applications in power electronics and embedded projects.
  • Features dual channel configuration combining P- and N-channel MOSFETs on one chip.
  • Surface mount design for automated assembly in high-volume manufacturing.
  • Supports maximum power dissipation of 1.8W across a broad operating temperature range.
  • Package dimensions are compact for PCB designs, ideal for space-limited electronics.
  • Operates reliably from -55°C up to 150°C maximum junction temperature.
  • Low drain-source resistance of 38mΩ enhances efficiency and reduces losses.

Product Description

The DiodesZetex DMC3016LDV-7 is a dual N/P-channel MOSFET designed for efficient switching applications in modern electronic circuits. With its enhancement mode configuration, it combines both P-type and N-type channels within a single package, delivering versatility for advanced power control and level-shifting tasks.

This MOSFET offers a maximum continuous drain current of 21A and a drain-source voltage rating of 30V, suitable for medium to high current switching in embedded systems, power regulation, and DC-DC converters. Its low drain-source resistance of 38mΩ ensures minimal power losses and increased energy efficiency in operation.

Engineered for surface mount (SMD) technology, the DMC3016LDV-7 features the compact 8-Pin PDI3333 package, facilitating automated placement in high-volume PCB manufacturing and enabling tight layouts for space-constrained applications. The device is robust, with a maximum power dissipation of 1.8W and a wide operating temperature range from -55°C to 150°C, making it reliable for both industrial and commercial environments.

The dual configuration allows integration in circuits requiring both high-side and low-side switching, simplifying design complexity and reducing component count. Typical uses include power management modules, motor drivers, battery protection circuitry, and voltage level-shifting systems in industrial equipment and consumer electronics.

Its typical gate charge of 9.5nC (at Vgs) supports rapid switching, improving response times in high-frequency applications. The device accommodates a maximum gate-source voltage of 20V and a forward voltage of 0.7V, providing flexibility for various control schemes.

Construction ensures durability, with precise package dimensions of 3.15mm x 3.15mm x 0.8mm and dual elements per chip for redundant safety and improved electrical performance. It meets standard reliability requirements for electronic semiconductors, though it is not rated for automotive use or specific standards/approvals.

Industrial applications include power conversion modules, programmable power supplies, control systems, and smart devices requiring reliable MOSFET switching. Laboratory environments can benefit from its dual-channel versatility for prototype and test circuits, while commercial electronics designers will appreciate its efficient footprint and robust electrical characteristics.

Explore more advanced semiconductor solutions in the MOSFET category by DiodesZetex.

DiodesZetex Dual MOSFET , 2 Element, P/N Channel, 21A 30V, Enhancement Mode, 8-Pin PDI3333 DMC3016LDV
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Frequently Asked Questions

The maximum continuous drain current for this model is 21A.

It has a maximum drain-source voltage rating of 30V.

The typical gate charge at Vgs is 9.5nC.

The package dimensions are 3.15mm x 3.15mm x 0.8mm.

The maximum power dissipation is 1.8W.

It operates reliably within a temperature range of -55°C to 150°C.

The drain-source resistance is 38mΩ, which enhances efficiency.

This chip contains 2 elements, combining both P- and N-channel MOSFETs.

It is designed for surface mount (SMD) technology.

This model is suitable for power management modules, motor drivers, and battery protection circuitry.

The maximum gate-source voltage is 20V.

The forward voltage is rated at 0.7V.

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