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Toshiba N-Channel MOSFET 5A 500V Enhancement Mode 3-Pin TO-220 TK5A50D,S5Q(J)
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK5A50D,S5Q(J |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Provides high voltage handling of up to 500V for power electronics.
- Supports continuous drain current of 5A for reliable switching and amplification tasks.
- Utilizes a 3-pin TO-220 package suitable for through-hole mounting.
- Features an enhancement mode channel for efficient and low-loss operation.
- Offers a maximum gate source voltage of 30V for versatile control inputs.
- Operates in extreme temperature ranges, from -55°C to +150°C, for industrial environments.
- Low on-resistance of 1.5Ω provides improved system efficiency.
- Robust construction and quality from a trusted Toshiba brand.
Product Description
The Toshiba TK5A50D,S5Q(J) is a high-performance N-Channel MOSFET designed for advanced power switching and amplifier applications in industrial, commercial, and power conversion circuits. Its 500V maximum drain-source voltage enables use in demanding power systems and high-voltage electronic designs, while its 5A continuous drain current delivers reliable operation for medium-to-high power loads.
Engineered in an industry-standard 3-pin TO-220 package, this device is optimized for easy through-hole mounting on printed circuit boards, heat sinks, and other high-power assemblies. The enhancement mode channel ensures low conduction losses and provides precise gate control with a typical gate charge of 11nC at Vgs, supporting high-speed switching performance.
The MOSFET's low maximum drain-source on-resistance of 1.5Ω enhances efficiency, reduces heat generation, and enables compact power management solutions. The wide gate-source voltage rating (up to 30V) allows compatibility with diverse driver circuits and microcontroller platforms. Its rugged construction guarantees operation across extensive temperature ranges, from as low as -55°C up to +150°C, suitable for harsh industrial, power supply, inverter, and motor control environments.
The device can dissipate up to 35W of power in favorable mounting configurations, accommodating dynamic loads. Forward voltage characteristics and compact dimensions (10 mm length, 4.5 mm width, 15 mm height) allow design flexibility in tight PCB layouts.
Toshiba ensures exacting quality standards with this semiconductor, making it suitable for professional use in power supplies, inverters, industrial motor drives, and robust switching circuits where reliability and electrical integrity are paramount.
Browse more MOSFETs and electronic components from Toshiba and leading brands on EnvMart for reliable, high-efficiency power and signal management solutions.
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Frequently Asked Questions
The maximum drain-source voltage is 500V, making it suitable for high-voltage applications.
It can handle a continuous drain current of 5A, which is reliable for medium-to-high power loads.
This model is packaged in a TO-220 configuration, which is designed for through-hole mounting.
The maximum gate-source voltage is 30V, allowing for versatile control inputs.
It operates in a temperature range from -55°C to +150°C, suitable for harsh industrial environments.
The maximum drain-source on-resistance is 1.5Ω, which helps improve system efficiency.
The typical gate charge at Vgs is 11nC, supporting high-speed switching performance.
The dimensions are 10 mm in length, 4.5 mm in width, and 15 mm in height.
It utilizes an enhancement mode N-channel, which is designed for efficient and low-loss operation.
It can dissipate up to 35W of power in favorable mounting configurations.
This MOSFET is suitable for power supplies, inverters, industrial motor drives, and robust switching circuits.
It is manufactured in Japan, ensuring high quality standards.
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