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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS4510TRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 61A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 13.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
The Infineon IRFS4510TRLPBF is a HEXFET N-Channel MOSFET engineered for high-efficiency power switching and optimal thermal management. Housed in a 3-pin TO-263 surface-mount package, this enhancement-mode transistor offers a maximum continuous drain current of 61A and withstands drain-source voltages up to 100V. Its low drain-source on-resistance of 13.9mΩ significantly reduces conduction losses, making it excellent for power supplies, DC-DC converters, and high-current switching applications.
This power MOSFET is built with surface-mount technology, enabling streamlined PCB assembly and improved heat dissipation through its compact TO-263 form factor. The device can withstand temperatures ranging from -55°C to 175°C, providing outstanding reliability in industrial or automotive equipment exposed to varying thermal conditions. The maximum gate-source voltage of 20V offers broad compatibility with various gate drive circuits, while the typical gate charge of 58nC at Vgs supports rapid switching, critical for high-frequency and pulse applications.
With a maximum power dissipation rating of 140W, the IRFS4510TRLPBF is well-suited for continuous operation under high-load scenarios. Its forward voltage (Vf) is rated at 1.3V, contributing to reduced switching losses and enhanced overall system efficiency. The device adheres to proven semiconductor reliability, boasting robust specs required in demanding commercial and industrial systems, including power management, electric motor drivers, as well as advanced battery and inverter designs.
Key features of this MOSFET include its N-channel enhancement mode operation, benchmark low on-resistance, and the compact, thermally efficient TO-263 package, which makes it ideal for dense PCB layouts in modern electronics. The component's robust performance is trusted in both low- and high-side switching, with applications spanning industrial automation, energy conversion, high-efficiency power supplies, and automotive controls (excluding AEC-Q-defined automotive use, as it is not automotive standard qualified).
Engineers benefit from an efficient combination of high current capability, broad thermal tolerance, and superior switching characteristics, supporting reliable performance over years of operation. The IRFS4510TRLPBF MOSFET is part of Infineon's extensive family of power semiconductor devices designed to meet the evolving needs of power electronics in manufacturing, automation, renewable energy, and advanced embedded control.
For more products like this, explore the MOSFET portfolio in the Electronics & Electricals > Semiconductor > MOSFET category or browse additional Infineon solutions available on EnvMart.
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