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Infineon HEXFET N-Channel MOSFET 61A 100V Enhancement 3-Pin TO-263 IRFS4510TRLPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.83mm
Length 10.67mm
Model IRFS4510TRLPBF
Width 9.65mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 61A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 13.9mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 140W
Typical Gate Charge Qg @ Vgs 58nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • N-channel MOSFET with a maximum continuous drain current of 61A and drain-source voltage of 100V.
  • Enhancement mode with low drain-source resistance of just 13.9mΩ for reduced conduction losses.
  • 3-pin TO-263 surface mount package ensures efficient heat dissipation and compact PCB integration.
  • Operates from -55°C to 175°C, supporting a broad range of power management and industrial applications.
  • Maximum gate-source voltage of 20V enables flexibility in driver circuit choices and system compatibility.
  • Typical gate charge of 58nC at Vgs for fast switching and improved efficiency in high-frequency applications.
  • High power dissipation capability up to 140W for sustainable operation under heavy loads.
  • Suited for high-performance power management, DC-DC converters, and motor control systems.

Product Description

The Infineon IRFS4510TRLPBF is a HEXFET N-Channel MOSFET engineered for high-efficiency power switching and optimal thermal management. Housed in a 3-pin TO-263 surface-mount package, this enhancement-mode transistor offers a maximum continuous drain current of 61A and withstands drain-source voltages up to 100V. Its low drain-source on-resistance of 13.9mΩ significantly reduces conduction losses, making it excellent for power supplies, DC-DC converters, and high-current switching applications.

This power MOSFET is built with surface-mount technology, enabling streamlined PCB assembly and improved heat dissipation through its compact TO-263 form factor. The device can withstand temperatures ranging from -55°C to 175°C, providing outstanding reliability in industrial or automotive equipment exposed to varying thermal conditions. The maximum gate-source voltage of 20V offers broad compatibility with various gate drive circuits, while the typical gate charge of 58nC at Vgs supports rapid switching, critical for high-frequency and pulse applications.

With a maximum power dissipation rating of 140W, the IRFS4510TRLPBF is well-suited for continuous operation under high-load scenarios. Its forward voltage (Vf) is rated at 1.3V, contributing to reduced switching losses and enhanced overall system efficiency. The device adheres to proven semiconductor reliability, boasting robust specs required in demanding commercial and industrial systems, including power management, electric motor drivers, as well as advanced battery and inverter designs.

Key features of this MOSFET include its N-channel enhancement mode operation, benchmark low on-resistance, and the compact, thermally efficient TO-263 package, which makes it ideal for dense PCB layouts in modern electronics. The component's robust performance is trusted in both low- and high-side switching, with applications spanning industrial automation, energy conversion, high-efficiency power supplies, and automotive controls (excluding AEC-Q-defined automotive use, as it is not automotive standard qualified).

Engineers benefit from an efficient combination of high current capability, broad thermal tolerance, and superior switching characteristics, supporting reliable performance over years of operation. The IRFS4510TRLPBF MOSFET is part of Infineon's extensive family of power semiconductor devices designed to meet the evolving needs of power electronics in manufacturing, automation, renewable energy, and advanced embedded control.

For more products like this, explore the MOSFET portfolio in the Electronics & Electricals > Semiconductor > MOSFET category or browse additional Infineon solutions available on EnvMart.

Infineon HEXFET N-Channel MOSFET 61A 100V Enhancement 3-Pin TO-263 IRFS4510TRLPBF
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Frequently Asked Questions

The maximum continuous drain current for the Infineon IRFS4510TRLPBF is 61A.

This MOSFET can withstand a maximum drain-source voltage of 100V.

The typical gate charge at Vgs for the IRFS4510TRLPBF is 58nC, which supports fast switching.

It has a maximum power dissipation capability of 140W, suitable for heavy load applications.

The dimensions of the TO-263 package are 10.67mm in length, 9.65mm in width, and 4.83mm in height.

The operating temperature range for the IRFS4510TRLPBF is from -55°C to 175°C.

The maximum gate-source voltage for this MOSFET is 20V, allowing for flexibility in driver circuits.

The drain-source on-resistance is 13.9mΩ, which helps reduce conduction losses.

It is well-suited for high-performance power management, DC-DC converters, and motor control systems.

This MOSFET features a 3-pin configuration, suitable for surface mounting.

The IRFS4510TRLPBF uses an N-channel enhancement mode.

The forward voltage (Vf) rating for this model is 1.3V, contributing to reduced switching losses.

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