Infineon HEXFET N-Channel MOSFET, 300A, 60V, TO-263, Enhancement, 8-Pin, Surface Mount IRLS3036TRL7PP

Infineon IRLS3036TRL7PP is a HEXFET N-channel MOSFET designed for high-power electronic applications where efficient switching and low conduction loss are critical. Featuring a robust 300A continuous drain current capability and 60V maximum drain-source voltage, this device caters to demanding power conversion, motor control, and industrial circuit requirements.

The IRLS3036TRL7PP is engineered in an 8-pin TO-263 surface-mount package, ensuring ease of PCB assembly and compatibility with automated production processes. As part of Infineon's acclaimed HEXFET series, it provides enhancement mode operation, which is ideal for driving circuits where output needs to be controlled precisely. Its low drain-source resistance of 2.2mΩ offers minimized power losses during operation, thus supporting greater efficiency in end applications.

The device features a typical gate charge of 110nC, enabling rapid switching suitable for fast-paced electronic systems. With a maximum power dissipation of 380W, it withstands thermal stresses and harsh operational environments. The MOSFET operates across a wide temperature range from -55°C to 175°C, making it reliable for industrial, automotive, and commercial electronics.

Physical dimensions are compact: length of 10.67mm, width of 4.83mm, and height of 9.65mm, facilitating integration in space-constrained designs. The maximum gate-source voltage is rated at 16V, and forward voltage at 1.3V, lending further flexibility in circuit design. The channel mode is enhancement, and the pin count is 8, aligning with contemporary requirements for high-density boards.

Typical applications include power management modules, DC-DC converters, motor drivers, server and telecom power supplies, industrial controls and inverter circuits. Suitable in manufacturing, power distribution, laboratory, and advanced electronics sectors, the IRLS3036TRL7PP enables highly efficient, durable power switching solutions.

Type N-channel MOSFET suitable for high power switching and amplification. Handles up to 300A continuous drain current at 60V maximum drain-source voltage. TO-263 surface mount package configuration with 8-pin layout. HEXFET series enhancement mode for optimized system efficiency.

Low drain-source resistance of 2.2mΩ minimizes power loss. Typical gate charge of 110nC ensures efficient fast switching. Maximum power dissipation rated at 380W for demanding applications. Wide operating temperature range from -55°C to 175°C for reliability.

Forward voltage of 1.3V, 16V maximum gate-source voltage tolerance. Compact physical dimensions: 10.67mm length, 4.83mm width, 9.65mm height. Explore more power MOSFETs and advanced Infineon semiconductor solutions in the MOSFETs category at EnvMart.