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Nexperia N-Channel MOSFET 3A 30V Enhancement SOT-23 PMV100ENEAR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | PMV100ENEAR |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 118mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.5W |
| Typical Gate Charge Qg @ Vgs | 3.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Type N-channel enhancement mode field-effect transistor for efficient switching applications.
- Supports up to 3A continuous drain current and 30V maximum drain-source voltage.
- Low drain-source resistance of 118 milliohms for reliable power handling.
- Compact surface-mount SOT-23 package suitable for PCB integration.
- Very fast switching speed enabled by trench MOSFET technology.
- Logic level compatible for easy interface with microcontrollers and digital circuits.
- Electrostatic discharge protection rated over 2 kV HBM.
- AEC-Q101 qualified for automotive-grade reliability and performance.
Product Description
Nexperia PMV100ENEAR is a high-performance N-channel enhancement mode MOSFET designed for demanding switching and relay driver applications. This device features a continuous drain current of 3A and a drain - source voltage rating of 30V, making it ideal for power circuits and signal switching tasks across a wide array of industrial and electronic equipment.
The compact SOT-23 (TO-236AB) surface-mount package allows streamlined integration onto PCBs, saving space in high-density designs. With a very low drain-source resistance of 118 milliohms, the MOSFET ensures minimal power loss at high currents, contributing to improved efficiency and reduced heat dissipation.
Utilizing advanced trench MOSFET technology, the device offers exceptionally fast switching speeds and high frequency capability, critical for relay drivers, high-speed line drivers, low-side load switching, and circuit protection applications. Logic-level gate compatibility means it can be directly interfaced with standard microcontrollers, FPGAs, or other digital ICs without external signal conditioning.
Electrostatic discharge protection exceeding 2 kV HBM boosts reliability in harsh environments, and AEC-Q101 automotive qualification ensures long-term endurance and stability required by automotive, industrial, and commercial systems. The maximum gate - source voltage is 20V and the device is capable of dissipating up to 4.5W of power.
Type N-channel enhancement mode field-effect transistor for efficient switching applications. Supports up to 3A continuous drain current and 30V maximum drain-source voltage. Low drain-source resistance of 118 milliohms for reliable power handling.
Compact surface-mount SOT-23 package suitable for PCB integration. Very fast switching speed enabled by trench MOSFET technology. Logic level compatible for easy interface with microcontrollers and digital circuits. Electrostatic discharge protection rated over 2 kV HBM.
AEC-Q101 qualified for automotive-grade reliability and performance.
Applications include relay drivers, high-speed line drivers, low-side loadswitching, and switching circuits in industrial, laboratory, automotive, and commercial electronics. Browse more Nexperia semiconductors and MOSFETs in the Electronics & Electricals category at EnvMart for your next PCB and system design.
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Frequently Asked Questions
The PMV100ENEAR supports a maximum continuous drain current of 3A.
This model has a maximum drain-source voltage rating of 30V.
It comes in a compact SOT-23 surface-mount package, which is suitable for PCB integration.
The PMV100ENEAR features a low drain-source resistance of 118 milliohms.
The operating temperature range is from -55°C to 150°C.
It is capable of dissipating up to 4.5W of power.
The maximum gate-source voltage is rated at 20V.
This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, low-side load switching, and circuit protection.
Yes, it is AEC-Q101 qualified, ensuring automotive-grade reliability and performance.
The fast switching speed is enabled by advanced trench MOSFET technology.
The typical gate charge at Vgs is 3.6nC.
This model has a pin count of 3.
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