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ROHM N-Channel Power MOSFET 24A, 600V, TO-263 Package R6024ENJ

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ROHM N-Channel Power MOSFET 24A, 600V, TO-263 Package R6024ENJ

Name: ROHM N-Channel Power MOSFET 24A, 600V, TO-263 Package R6024ENJ
Brand: ROHM
SKU: 81305
Price: 3.38 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	4.7mm
Length	10.4mm
Model	R6024ENJ
Width	9.2mm
Mount Type	Surface
Series	R6024ENJ
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	24A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	320mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	245W
Typical Gate Charge Qg @ Vgs	70nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.5V

Key Features

N-channel enhancement mode power MOSFET for efficient power switching.
Maximum continuous drain current of 24A for demanding load requirements.
High maximum drain-source voltage rating of 600V increases application versatility.
TO-263 surface-mount package supports advanced thermal performance.
Fast switching capability and low gate charge improve overall circuit efficiency.
Low Rds(on) of 320mΩ reduces energy losses in high-current operations.
Wide operating temperature range of -55°C to +150°C for harsh environments.
Pb-free lead plating supports environmental and regulatory compliance.

Product Description

The ROHM R6024ENJTL is a high-performance N-channel enhancement mode power MOSFET designed to provide reliable operation in demanding industrial and commercial applications. With a high drain-source voltage rating of 600V and a continuous drain current capability of 24A, this MOSFET is well-suited for circuits requiring robust power switching, including power supplies, motor drives, and bulk power controllers.

Built using advanced microprocessing technology, the R6024ENJTL features low on-resistance (Rds(on)) of only 320mΩ, ensuring efficient current conduction and minimal power losses. The device supports fast switching speeds and a low typical gate charge of 70nC, making it ideal for applications where energy efficiency and precise control are critical. The TO-263 (D2PAK) package also allows for superior thermal dissipation, supporting higher current levels in compact, surface-mount assemblies.

The MOSFET can safely operate over a wide temperature range, from -55°C up to 150°C. Its gate-source voltage is rated up to a maximum of ±30V, supporting a variety of drive circuit topologies. The unit is further optimized for ease of parallel operation, and its Pb-free lead plating helps ensure compliance with RoHS and global environmental standards.

The ROHM R6024ENJTL incorporates a 3-pin design, making connection and layout straightforward. With a length of 10.4mm, width of 9.2mm, and height of 4.7mm, this device provides a compact footprint suited for densely populated circuit boards.

This MOSFET is commonly employed in industrial automation, power switching, electric vehicle systems, power factor correction circuits, and high-performance LED drivers. It serves as a key active component in any application prioritizing high efficiency, reliability, and space reduction in electronic power control systems.

For a complete selection of N-channel MOSFETs and other discrete semiconductors, explore related categories in Electronics & Electricals on EnvMart or browse the full ROHM portfolio for further alternatives.