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Infineon IMZ1 N-Channel MOSFET, 26A, 1200V, 90mΩ, TO-247-4
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IMZ1 |
| Mount Type | Surface |
| Series | IMZ1 |
| Package Type | TO-247 |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 26A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
Key Features
- N-Channel enhancement MOSFET with IMZ1 series technology.
- Supports a maximum continuous drain current of 26A for high-power systems.
- Handles up to 1200V drain-source voltage, suitable for demanding industrial and power conversion environments.
- Low drain-source resistance of 90mΩ for improved efficiency and reduced losses.
- TO-247-4 package allows easy surface mounting and integration in compact assemblies.
- Features robust CoolSiC process for optimized switching and conduction performance.
- Wide gate-source voltage range and high threshold voltage enable reliable operation.
- Integrated body diode rated for hard commutation and low loss operation.
Product Description
Infineon IMZ120R090M1HXKSA1 IMZ1 N-Channel MOSFET, 26A, 1200V, TO-247-4, is engineered for advanced power management and high-performance electronic applications. It incorporates state-of-the-art CoolSiC silicon carbide trench technology, offering superior switching and conduction losses in comparison to traditional silicon transistors such as IGBTs and MOSFETs.
This N-Channel MOSFET supports a maximum continuous drain current of 26A and drain-source voltage of 1200V, making it ideal for demanding industrial systems, motor control, power conversion, renewable energy, and high-voltage switching operations. The low on-state resistance of 90mΩ facilitates high-efficiency solutions by minimizing power losses, and its enhancement mode design adds reliability for precise control.
N-Channel enhancement MOSFET for high-voltage industrial circuits. CoolSiC technology ensures benchmark switching and conduction losses. Maximum drain current of 26A and voltage tolerance up to 1200V. TO-247-4 package enables flexible surface mounting for compact boards.
Rated with a wide gate-source voltage range and high threshold voltage (Vth > 4V). Integrated robust body diode allows hard commutation and low loss operation. Suitable for power supplies, motor drives, renewable energy installations, and commercial electronics.
Reliable, durable, and compliant with modern manufacturing standards for long-life industrial use.
Industrial use cases include manufacturing automation, robotics, renewable energy (solar/wind inverter systems), EV charging infrastructure, and commercial high-voltage power modules.
Explore more Infineon MOSFETs and power semiconductor solutions in the EnvMart electronics and semiconductor category for reliable, efficient switching and power control components.
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Frequently Asked Questions
The Infineon IMZ1 N-Channel MOSFET supports a maximum continuous drain current of 26A.
It can handle a maximum drain-source voltage of 1200V, making it suitable for high-voltage applications.
The on-state resistance is 90mΩ, which helps improve efficiency and reduce power losses.
This model comes in a TO-247-4 package, allowing for easy surface mounting.
It is an N-Channel enhancement MOSFET, designed for high-voltage industrial circuits.
It is suitable for demanding industrial systems, motor control, power conversion, and renewable energy applications.
This MOSFET features a wide gate-source voltage range, with a high threshold voltage (Vth > 4V) for reliable operation.
The Infineon IMZ1 N-Channel MOSFET is manufactured in India.
This model has a pin count of 4, suitable for various electronic configurations.
It supports surface mounting, which facilitates integration into compact assemblies.
Yes, it features an integrated body diode rated for hard commutation and low loss operation.
This product is part of the IMZ1 series, known for its advanced power management capabilities.
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