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Infineon LogicFET N-Channel MOSFET 17 A 100 V Enhancement 3-Pin TO-220 IRL530NPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRL530NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | LogicFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| N-channel logicFET,IRL530N 15A 100VBrand | International Rectifier |
Key Features
- Designed for efficient switching and low conduction losses.
- Through-hole mount type with 3 pins for versatile PCB integration.
- Robust device with maximum power dissipation of 79 W.
- Operates reliably from -55°C to 175°C operating temperature.
- Typical gate charge of 34 nC at Vgs enhances switching performance.
- Maximum drain-source resistance of 100 milliohms minimizes power loss.
- Wide gate-source voltage range of -16 V to +16 V allows flexible gate drive.
- Manufactured in China under strict quality standards.
Product Description
The Infineon IRL530NPBF is a LogicFET N-Channel MOSFET optimized for power electronics applications requiring efficient switching and low conduction losses. It supports a maximum continuous drain current of 17 A and can withstand drain-source voltages up to 100 V. Packaged in a 3-pin TO-220 form factor, this device is suited for through-hole mounting on various printed circuit boards.
Designed to operate reliably over a broad temperature range from -55°C to 175°C, it offers a high power dissipation capability of 79 W, enabling use in demanding industrial and power supply environments. The MOSFET features a typical gate charge of 34 nC at Vgs, providing low gate drive power consumption and fast switching performance.
Its maximum drain-source resistance (Rds(on)) is 100 milliohms, enhancing efficiency by minimizing conduction loss during operation. The device supports a gate-source voltage range of -16 V to +16 V, permitting flexible control circuit designs. Compact physical dimensions (10.54 mm length, 4.69 mm width, and 8.77 mm height) make it adaptable to space-constrained assemblies.
Manufactured in China, this component aligns with industry standards but does not carry automotive qualifications, making it suitable for a broad range of commercial and industrial power electronic applications including motor control, power converters, and switch-mode power supplies.
Designed for efficient switching and low conduction losses. Through-hole mount type with 3 pins for versatile PCB integration. Robust device with maximum power dissipation of 79 W. Operates reliably from -55°C to 175°C operating temperature.
Typical gate charge of 34 nC at Vgs enhances switching performance. Maximum drain-source resistance of 100 milliohms minimizes power loss. Wide gate-source voltage range of -16 V to +16 V allows flexible gate drive. Compact dimensions: length 10.54 mm, width 4.69 mm, height 8.77 mm.
Manufactured in China under strict quality standards. Ideal for industrial, power management, motor control, and electronic designs. Explore the Infineon MOSFET range at EnvMart for trusted power electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
It can withstand a maximum drain-source voltage of 100 V.
This MOSFET operates reliably over a temperature range from -55°C to 175°C.
The typical gate charge at Vgs is 34 nC.
It has a maximum power dissipation capability of 79 W.
The dimensions are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
The maximum drain-source resistance (Rds(on)) is 100 milliohms.
It uses a through-hole mount type with 3 pins.
It supports a gate-source voltage range of -16 V to +16 V.
This model is suitable for applications in motor control, power converters, and switch-mode power supplies.
It belongs to the LogicFET series.
This component is manufactured in China under strict quality standards.
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