ROHM Dual Type P and Type N Channel Enhancement MOSFET 5A 40V 8-Pin Surface Mount TSMT-8 Package QH8MB5TCR

ROHM QH8MB5TCR is a dual MOSFET device combining both Type P and Type N channel transistors in an 8-pin TSMT-8 surface mount package, engineered for high efficiency and compact form factor. Rated for a maximum continuous drain current of 5A and a drain-source voltage of 40V, it targets applications such as factory automation equipment, motor drives, and equipment with 24V input power supplies.

The enhancement mode channel offers low on-resistance of 44 milliohms, minimizing power loss and improving overall device efficiency. The device supports operation over a broad temperature range from -55°C to 150°C, suitable for demanding industrial environments.

With a maximum power dissipation of 1.5W and low gate charge of 3.5nC at Vgs, the QH8MB5TCR enables fast switching performance which is critical for modern power management systems. Safety features include a maximum gate-source voltage of 20V and forward voltage rating of 1.2V to ensure robust gate control.

This MOSFET is housed in a compact 8-pin TSMT-8 package measuring approximately 3.1mm by 2.9mm by 0.85mm, supporting surface mount technology for streamlined PCB integration. It is RoHS compliant and uses lead plating free of harmful substances, meeting environmental regulations.

The device is ideal for use in industrial automation systems, motor drive circuits, and telecommunications base station equipment where space constraints and power efficiency are critical. Combining the P-channel and N-channel MOSFETs in one package reduces design complexity and supports equipment power consumption optimization.

This MOSFET supports enhancement mode operation with low on-resistance for improved efficiency. Designed for 24V input industrial and automation applications requiring robust switching. Features a maximum power dissipation of 1.5W and a maximum operating temperature of 150°C.

Typical gate charge is only 3.5nC at specified gate voltage, enabling fast switching speeds. Compact size with package dimensions approximately 3.1mm length, 2.9mm height, and 0.85mm width. Pb-free lead plating and RoHS and Halogen free compliant, ensuring environmental safety.

Suitable for factory automation, motor drives, and base station equipment where space and power efficiency are critical. Maximum gate-source voltage rating of 20V and forward voltage of 1.2V supports reliable gate control.

This product enriches the Electronics & Electricals category with a high-performance MOSFET solution for discrete semiconductor applications, making it a key component in modern electronic systems. Browse more MOSFETs from ROHM and other industry leaders at EnvMart to find your perfect fit.