Infineon OptiMOS-TM3 N-Channel MOSFET, 40 A Continuous Drain Current, 100 V Drain Source Voltage, 8-Pin BSZ150N10LS3GATMA1

Infineon BSZ150N10LS3GATMA1 OptiMOS-TM3 N-Channel MOSFET is engineered for efficient power management in semiconductor applications. It supports a continuous drain current of 40 A and can withstand a maximum drain-source voltage of 100 V, suitable for various electronic circuit designs requiring robust switching capabilities.

This enhancement mode MOSFET features an 8-pin TSDSON surface mount package, enabling compact PCB layouts and effective thermal management with a maximum power dissipation of 63 watts. The device's low maximum drain-source resistance of 15 milliohms contributes to reduced conduction losses, enhancing overall circuit efficiency.

Designed to operate in harsh conditions, it maintains performance across a wide temperature range from -55°C to 150°C. Its typical gate charge of 26 nanocoulombs ensures optimal switching speeds, while the maximum gate-source voltage of 20 V secures gate integrity under operating stresses.

Mechanical dimensions of 5.35 mm length, 6.1 mm width, and 1.2 mm height make this MOSFET suitable for compact electronic assemblies. Forward voltage drop of 1.2 volts further characterizes its conduction efficiency.

Infineon's commitment to environmental standards is evident with this component being Pb-free and halogen-free, complying with RoHS and IEC61249-2-23 standards.

Applications include power control in industrial electronics, automotive systems, consumer electronics, and general semiconductor circuit design requiring durable and high-efficiency MOSFETs.

Feature 8-pin TSDSON package suitable for surface mounting. Implements enhancement mode channel operation for efficient switching. Supports maximum power dissipation of 63 watts for robust performance. Has maximum drain to source resistance of 15 milliohms ensuring low conduction loss.

Operates reliably within temperature range from -55°C to 150°C. Typical gate charge is 26 nanocoulombs at specified gate voltage, optimizing switching speed. Maximum gate-source voltage rating is 20 volts. Compact dimensions with length 5.35 mm, width 6.1 mm, and height 1.2 mm.

Features forward voltage drop of 1.2 volts for efficient conduction. Compliant with lead-free RoHS standards and halogen-free per IEC61249-2-23 specifications.

Explore more Infineon MOSFETs and semiconductor components in EnvMart's Electronics & Electricals catalog to find products suited to your industrial, automotive, and electronic device design requirements.