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Vishay P-Channel 12 V Type P-Channel MOSFET, 137 A, 375 W PowerPAK (8x8L) Surface Mount 4-Pin SQJ123ELP-T1_GE3

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Vishay P-Channel 12 V Type P-Channel MOSFET, 137 A, 375 W PowerPAK (8x8L) Surface Mount 4-Pin SQJ123ELP-T1_GE3

Name: Vishay P-Channel 12 V Type P-Channel MOSFET, 137 A, 375 W PowerPAK (8x8L) Surface Mount 4-Pin SQJ123ELP-T1_GE3
Brand: Vishay
SKU: 171939

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	2.38mm
Length	10.41mm
Model	SQJ123ELP-T1_GE3
Width	6.73mm
Mount Type	Surface
Series	P-Channel 12 V
Maximum Operating Temperature	175°C
Package Type	PowerPAK (8x8L)
Minimum Operating Temperature	-55°C
Pin Count	4
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	137A
Maximum Drain Source Voltage Vds	12V
Maximum Drain Source Resistance Rds	6.6mΩ
Maximum Power Dissipation Pd	375W
Typical Gate Charge Qg @ Vgs	120nC
Maximum Gate Source Voltage Vgs	8V
Forward Voltage Vf	-0.76V

Key Features

Designed with a PowerPAK (8x8L) package for surface mounting.
Offers a low drain-source resistance of 6.6 milliohms for efficient operation.
Supports a maximum gate-source voltage of 8 V with a forward voltage of -0.76 V.
Operates reliably from -55°C to 175°C, suitable for automotive applications.
Complies with the AEC-Q101 automotive standard ensuring high product reliability.
Includes 4 pins to facilitate efficient circuit integration.
Gate charge typically 120 nC at specified voltage for optimized switching performance.

Product Description

Vishay SQJ123ELP-T1_GE3 is a P-Channel MOSFET semiconductor device engineered for high-performance switching applications. It supports a maximum continuous drain current of 137 A and a power dissipation rating of 375 W at a nominal voltage of 12 V, making it suitable for demanding electronic circuits.

This MOSFET utilizes a compact PowerPAK (8x8L) surface mount package with 4 pins, providing low thermal resistance and reliable performance in compact layouts. Its maximum drain-source resistance is 6.6 milliohms, enabling efficient current flow and minimal loss.

Designed with a maximum gate-source voltage of 8 V and forward voltage of -0.76 V, the device ensures precise control and switching efficiency. Operating temperature range from -55°C to 175°C and AEC-Q101 qualification meet stringent automotive specifications, ensuring robustness for automotive and industrial electronics.

The device dimensions are 10.41 mm in length, 6.73 mm in width, and 2.38 mm in height, allowing for easy integration in boards with restricted spatial requirements. Typical gate charge of 120 nC at specified voltage ensures fast switching capabilities in power management and control circuits.

PowerPAK (8x8L) surface mount package for compact designs. Low drain-source resistance for optimized efficiency. Wide operating temperature range with automotive-grade qualification. High current and power ratings for industrial and automotive electronics.

Reliable gate control with precise voltage and charge ratings.

This MOSFET is ideal for use in industrial power supplies, automotive control units, and other electrical systems requiring high current switching and compact packaging. Vishay’s adherence to stringent quality and reliability standards ensures dependable long-term operation.

Explore more semiconductor and discrete MOSFET options in the Electronics & Electricals category at EnvMart for your specialized applications.