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ROHM Dual SP8K41 2 N-Channel MOSFET 3.4 A 80 V Enhancement Mode 8-Pin SOP SP8K41

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ROHM Dual SP8K41 2 N-Channel MOSFET 3.4 A 80 V Enhancement Mode 8-Pin SOP SP8K41

Name: ROHM Dual SP8K41 2 N-Channel MOSFET 3.4 A 80 V Enhancement Mode 8-Pin SOP SP8K41
Brand: ROHM
SKU: 171228

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	1.75mm
Length	5mm
Model	SP8K41
Width	6mm
Mount Type	Surface
Series	SP8K41
Maximum Operating Temperature	150°C
Package Type	SOP
Minimum Operating Temperature	-55°C
Pin Count	8
Number of Elements per Chip	2
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	3.4A
Maximum Drain Source Voltage Vds	80V
Maximum Drain Source Resistance Rds	13mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	6.6nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V
Transistor Configuration	Dual

Key Features

This MOSFET is an automotive grade component qualified to AEC-Q101 standard.
It features low on-resistance suitable for efficient switching applications.
Dual N-channel configuration includes two MOSFETs in one SOP8 package.
Built-in ESD protection diode enhances device reliability.
Designed for surface mount technology with a compact 8-pin SOP package size.
Operates over a wide temperature range from -55°C to 150°C.
Has a maximum power dissipation of 2 W for robust performance.
Typical gate charge is 6.6 nC ensuring good switching speed.

Product Description

ROHM SP8K41 is a dual N-channel MOSFET component rated for continuous drain current of 3.4 A and maximum drain-source voltage of 80 V. This enhancement mode transistor comes in an 8-pin SOP surface mount package which is compact and suitable for various electronic assembly processes.

This device is automotive grade and qualified according to the AEC-Q101 standard, making it reliable for automotive and industrial applications that require high performance and durability.

The low on-resistance of 13 mΩ minimizes conduction losses, improving efficiency in switching circuits. Its built-in ESD protection diode safeguards the device from electrostatic damage during handling and operation.

This dual MOSFET configuration integrates two N-channel devices within a single SOP8 package, offering space saving and simplified board layout.

Operating temperature range extends from -55°C to 150°C, supporting use in harsh environments. Maximum power dissipation is 2 W, suitable for moderately power-demanding applications.

The transistor's typical gate charge at Vgs is 6.6 nC, providing efficient switching capabilities for power management circuits. This MOSFET is ideal for automotive, industrial, and consumer electronics applications requiring compact, reliable switching components.

Set contains a dual element device with built-in ESD protection for enhanced robustness. Explore more semiconductors and MOSFETs in the ROHM category at EnvMart for your industrial and electronics needs.