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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IMZ120R350M1HXKSA1 |
| Mount Type | Surface |
| Series | IMZ1 |
| Package Type | TO-247 |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.7A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 350mΩ |
| Channel Mode | Enhancement |
Infineon IMZ120R350M1HXKSA1 is a high-performance N-Channel MOSFET designed with a 4-pin TO-247 package, engineered to operate at a maximum continuous drain current of 4.7 A and a maximum drain-source voltage of 1.2 kV. This enhancement mode device utilizes a state-of-the-art trench semiconductor process that ensures optimal switching efficiency and reliability in power electronic applications.
Compared to traditional silicon switches such as IGBTs and MOSFETs, this SiC MOSFET offers superior efficiency advantages including the lowest gate charge and device capacitance among 1200 V switches. It features zero reverse recovery losses due to an internal commutation proof body diode and exhibits temperature independent turn-off switching losses. These attributes enable reduced conduction and switching losses, making it an ideal choice for industrial and manufacturing power electronics.
The device’s wide gate-source voltage range, robust body diode rated for hard commutation, and temperature stable characteristics suit demanding circuits requiring high efficiency and reliability. The inclusion of a driver source pin facilitates optimized switching performance in power converter designs.
Infineon’s IMZ1 series MOSFET is perfectly suited for applications in industrial equipment, power management, motor drives, and renewable energy systems where high-voltage switching with minimized losses is critical. The TO-247-4 package enhances assembly convenience and thermal dissipation in demanding environments.
Maximum continuous drain current: 4.7 A. Maximum drain-source voltage: 1.2 kV. Maximum drain-source resistance: 350 mΩ. Package: TO-247, 4-pin surface mount. Enhancement mode trench semiconductor technology. No reverse recovery losses on body diode.
Temperature independent switching losses. Wide gate-source voltage operating range. Optimized for industrial power switching applications. Explore further semiconductor and MOSFET devices in the Infineon range at EnvMart for your industrial and electronic component needs.
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