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Infineon N-Channel MOSFET 4.7 A 1.2 kV Enhancement 4-Pin TO-247 IMZ120R350M1HXKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IMZ120R350M1HXKSA1
Mount Type Surface
Series IMZ1
Package Type TO-247
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 4.7A
Maximum Drain Source Voltage Vds 1.2kV
Maximum Drain Source Resistance Rds 350mΩ
Channel Mode Enhancement

Key Features

  • Maximum continuous drain current of 4.7 amperes for efficient power handling.
  • High maximum drain-source voltage of 1.2 kilovolts enables high voltage operation.
  • Low maximum drain-source resistance of 350 milliohms reduces conduction losses.
  • 4-pin TO-247 surface mount package ensures robust mechanical and thermal performance.
  • Enhanced channel mode with trench semiconductor process for improved switching and reliability.
  • Body diode rated for hard commutation minimizes switching losses.
  • Wide gate-source voltage range allows easy and reliable gate drive control.
  • Temperature independent low switching losses for stable operation under varied temperatures.

Product Description

Infineon IMZ120R350M1HXKSA1 is a high-performance N-Channel MOSFET designed with a 4-pin TO-247 package, engineered to operate at a maximum continuous drain current of 4.7 A and a maximum drain-source voltage of 1.2 kV. This enhancement mode device utilizes a state-of-the-art trench semiconductor process that ensures optimal switching efficiency and reliability in power electronic applications.

Compared to traditional silicon switches such as IGBTs and MOSFETs, this SiC MOSFET offers superior efficiency advantages including the lowest gate charge and device capacitance among 1200 V switches. It features zero reverse recovery losses due to an internal commutation proof body diode and exhibits temperature independent turn-off switching losses. These attributes enable reduced conduction and switching losses, making it an ideal choice for industrial and manufacturing power electronics.

The device’s wide gate-source voltage range, robust body diode rated for hard commutation, and temperature stable characteristics suit demanding circuits requiring high efficiency and reliability. The inclusion of a driver source pin facilitates optimized switching performance in power converter designs.

Infineon’s IMZ1 series MOSFET is perfectly suited for applications in industrial equipment, power management, motor drives, and renewable energy systems where high-voltage switching with minimized losses is critical. The TO-247-4 package enhances assembly convenience and thermal dissipation in demanding environments.

Maximum continuous drain current: 4.7 A. Maximum drain-source voltage: 1.2 kV. Maximum drain-source resistance: 350 mΩ. Package: TO-247, 4-pin surface mount. Enhancement mode trench semiconductor technology. No reverse recovery losses on body diode.

Temperature independent switching losses. Wide gate-source voltage operating range. Optimized for industrial power switching applications. Explore further semiconductor and MOSFET devices in the Infineon range at EnvMart for your industrial and electronic component needs.

Infineon N-Channel MOSFET 4.7 A 1.2 kV Enhancement 4-Pin TO-247 IMZ120R350M1HXKSA1
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