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Infineon N-Channel MOSFET 4 A 700 V Enhancement 3-Pin TO-251 IPS70R1K4P7SAKMA1

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Infineon N-Channel MOSFET 4 A 700 V Enhancement 3-Pin TO-251 IPS70R1K4P7SAKMA1

Name: Infineon N-Channel MOSFET 4 A 700 V Enhancement 3-Pin TO-251 IPS70R1K4P7SAKMA1
Brand: Infineon
SKU: 171213
Price: 0.34 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	6.22mm
Length	6.73mm
Model	IPS70R1K4P7SAKMA1
Width	2.4mm
Mount Type	Through Hole
Series	IPS70R
Maximum Operating Temperature	150°C
Package Type	TO-251
Minimum Operating Temperature	-40°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	4A
Maximum Drain Source Voltage Vds	700V
Maximum Drain Source Resistance Rds	1.4Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	22.7W
Typical Gate Charge Qg @ Vgs	4.7nC
Maximum Gate Source Voltage Vgs	16V
Forward Voltage Vf	900mV

Key Features

Designed with enhancement channel mode for high efficiency.
Maximum power dissipation of 22.7 W allows reliable operation.
Features low maximum drain source resistance of 1.4 Ω for reduced losses.
Operates from -40°C up to 150°C for robust temperature tolerance.
Includes integrated protection Zener diode for device safety.
Typical gate charge of 4.7 nC enables high-speed switching.
TO-251 package ensures through hole mount for easy PCB integration.
Compact dimensions with 6.73 mm length, 6.22 mm height, and 2.4 mm width.

Product Description

Infineon IPS70R1K4P7SAKMA1 is a high-performance N-Channel MOSFET designed for applications requiring up to 4 A continuous drain current and 700 V maximum drain to source voltage. Packaged in a compact 3-Pin TO-251 form factor, this component is tailored for efficient power switching with an enhancement channel mode and a maximum power dissipation of 22.7 watts.

The device operates over a wide temperature range from -40°C to 150°C, suitable for industrial and commercial electronics, power supplies, and control systems. Its low maximum drain source resistance of 1.4 Ω minimizes conduction losses, enhancing system efficiency.

Key electrical characteristics include a typical gate charge of 4.7 nC at V_GS and a maximum gate source voltage rating of 16 V, enabling rapid switching and robust gate control. The integrated protection Zener diode adds reliability in demanding electronic environments.

The IPS70R series is intended to meet the requirements of flyback topology designs and low power switch mode power supplies, making it an excellent choice for mobile phone chargers, notebook adapters, and similar electronic devices.

Enhancement channel N-Channel MOSFET for efficient switching. Through-hole TO-251 package for straightforward PCB mounting. Rated for maximum continuous drain current of 4 A and voltage of 700 V. Low Rds(on) resistance of 1.4 Ω reduces conduction losses.

Wide operating temperature range from -40°C to 150°C. High maximum power dissipation rating of 22.7 W supports reliable operation. Compact package dimensions facilitate integration in constrained spaces. Integrated protection diode increases device durability.

This MOSFET suits industrial, laboratory, and commercial electronic component requirements, especially in power electronics and semiconductor discrete device applications. The device adheres to standard electronic component quality norms but does not carry additional certifications.

Explore related Infineon MOSFET products and other semiconductor components on EnvMart for your electronic design needs.