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Infineon CoolMOS C7 N-Channel MOSFET, 20 A, 600 V Enhancement Mode, 5-Pin VSON IPL60R104C7AUMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 8.1mm
Model IPL60R104C7AUMA1
Width 8.1mm
Mount Type Surface
Series CoolMOS C7
Maximum Operating Temperature 150°C
Package Type VSON
Minimum Operating Temperature -40°C
Pin Count 5
Channel Type N
Maximum Continuous Drain Current Id 20A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 104mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 122W
Typical Gate Charge Qg @ Vgs 42nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Utilizes the CoolMOS C7 super junction technology for enhanced power density.
  • 5-pin VSON surface mount package reduces parasitic inductance for efficient switching.
  • Operates in enhancement mode suitable for hard and soft switching applications.
  • Maximum power dissipation of 122 W supports high thermal load operations.
  • Wide temperature range from -40°C to 150°C ensures reliable performance in demanding environments.
  • Low maximum drain source resistance of 104 milliohms minimizes conduction losses.
  • Typical gate charge of 42 nC allows fast switching speeds.
  • Robust maximum gate source voltage rating of 20 V ensures gate protection.

Product Description

The Infineon IPL60R104C7AUMA1 is a CoolMOS C7 series N-Channel MOSFET designed for high voltage power applications, featuring enhancement mode operation and a maximum continuous drain current of 20 amperes at up to 600 volts drain source voltage.

Built on the super junction technology pioneered by Infineon Technologies, this MOSFET offers increased power density and reduced switching losses, making it highly suitable for both hard and soft switching functions in industrial, power supply, and electronic applications.

It is housed in a 5-pin VSON surface mount package that minimizes parasitic inductance, enabling efficient device control. The device supports robust thermal management with a maximum power dissipation rating of 122 watts and an operating temperature range from -40°C to 150°C.

With a low maximum drain source resistance of 104 milliohms and a typical gate charge of 42 nanocoulombs, this MOSFET ensures fast switching and efficient conduction. Its gate can withstand voltages up to 20 volts, ensuring durability and reliability under demanding electrical stresses.

Compact with dimensions of 8.1 mm length, 8.1 mm width, and 1.1 mm height, it facilitates efficient PCB assembly and layout optimization. The forward voltage is 900 mV, contributing to effective power management in various electronic equipment including industrial controllers, power adapters, and switching regulators.

Utilizes CoolMOS C7 super junction technology for higher efficiency. 5-pin VSON SMD package ensures low parasitic inductance. Handles 20 A continuous drain current at 600 V drain source voltage. Enhanced power dissipation of 122 W for thermal reliability.

Wide operational temperature range from -40°C to 150°C. Low maximum Rds(on) of 104 milliohms reduces conduction losses. Typical gate charge of 42 nC for rapid switching performance. Robust maximum gate voltage rating of 20 V.

Compact footprint of 8.1 x 8.1 x 1.1 mm for space-constrained designs. Designed for use in industrial, electronic, and power management applications.

This MOSFET is ideal for industrial power electronics, switching power supplies, and electronic component assemblies requiring reliable high voltage switching and efficient thermal performance. It represents advanced semiconductor technology from Infineon, trusted for superior quality and efficiency in power devices.

Explore more Infineon semiconductor products and MOSFET solutions at EnvMart for robust and efficient electronic component sourcing.

Infineon CoolMOS C7 N-Channel MOSFET, 20 A, 600 V Enhancement Mode, 5-Pin VSON IPL60R104C7AUMA1
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