Infineon IMZ1 N-Channel MOSFET, 19 A, 1.2 kV Enhancement Mode, 4-Pin TO-247 IMZ120R140M1HXKSA1

Infineon IMZ120R140M1HXKSA1 is a state-of-the-art CoolSiC™ N-Channel MOSFET designed for efficient power conversion and switching tasks in demanding industrial and electronic applications. It supports a maximum drain current of 19 A and withstands drain-source voltages up to 1.2 kV, making it suitable for high voltage and current demanding systems.

This enhancement-mode MOSFET features exceptionally low on-resistance (140 mΩ) and minimal gate charge, which together reduce conduction and switching losses significantly. Its 4-pin TO-247 surface mount package facilitates effective heat dissipation and mechanical stability during operation.

Thanks to its trench semiconductor technology, this device exhibits ideal switching behavior with zero reverse recovery losses from the built-in body diode, enhancing efficiency in hard commutation scenarios and high-frequency operations without performance degradation over temperature variations.

The product is engineered with a high threshold voltage (>4 V) for stable gate control and a broad gate-source voltage range, simplifying the gate driver design. This robustness makes it suitable for power supplies, motor drivers, renewable energy inverters, and automotive power electronics.

The device operates in enhancement mode delivering efficient power switching. Features a low maximum drain-source resistance of 140 milliohms. Designed for high performance with low gate charge and low switching losses. Incorporates a robust body diode rated for hard commutation.

Wide gate-source voltage range supports flexible drive options. Surface mount TO-247 package ensures reliable mounting and heat dissipation. Ideal for industrial, automotive, and power management applications. Supports high-frequency switching with temperature independent losses.

4-pin configuration enables secure and precise connections.

This MOSFET is typically used in industrial, automotive, power supply, and renewable energy sectors where efficient power handling and thermal performance are essential. Its combination of SiC technology and robust package design enables long-term reliability and high efficiency in complex electrical environments.

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