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ROHM Type N, Type P-Channel MOSFET, 3.5 A, 60 V Enhancement, 8-Pin TSMT-8 QH8MC5TCR

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 2.9mm
Length 3.1mm
Model QH8MC5TCR
Width 0.85mm
Mount Type Surface
Series QH8MC5
Maximum Operating Temperature 150°C
Package Type TSMT-8
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type N, Type P
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 91mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 3.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET supports dual N channel and P channel operation enhancing design flexibility.
  • Maximum continuous drain current is rated at 3.5 amperes.
  • Maximum drain-source voltage is 60 volts suitable for 24V input equipment.
  • Comes in compact 8-pin TSMT-8 surface mount package.
  • Low on-resistance of 91 milliohms reduces power loss and improves efficiency.
  • Designed for applications in factory automation and motor control in base stations.
  • Maximum power dissipation of 1.5 watts with enhancement mode operation.
  • Operating temperature ranges from -55°C to 150°C for reliability in harsh environments.

Product Description

ROHM QH8MC5TCR is an advanced dual N channel and P channel MOSFET designed for industrial and electronic applications requiring efficient switching and power management. Featuring a maximum continuous drain current of 3.5 A and a maximum drain-source voltage of 60 V, it is ideally suited for 24V input systems including factory automation equipment and motors mounted on base stations.

This device comes in a compact 8-pin TSMT-8 surface mount package, enabling space-saving designs while maintaining high performance. The low on-resistance of 91 mΩ ensures reduced conduction losses, contributing to lower power consumption and improved equipment efficiency.

Key electrical characteristics include an enhancement channel mode, maximum gate-source voltage of 20 V, forward voltage drop of 1.2 V, and typical gate charge of 3.5 nC at Vgs, supporting fast switching capabilities.

With a robust operating temperature range from -55°C to 150°C, and power dissipation capability up to 1.5 W, the QH8MC5TCR provides reliable operation in demanding industrial environments. Its Pb-free lead plating complies with RoHS and halogen-free directives, ensuring environmental friendliness.

The compact dimensions (3.1 mm length, 0.85 mm width, and 2.9 mm height) make this MOSFET ideal for dense PCB layouts in electronic devices. This component is not automotive standard certified but meets all standard requirements for semiconductor discrete devices.

This MOSFET supports dual N channel and P channel operation enhancing design flexibility. Maximum continuous drain current is rated at 3.5 amperes. Maximum drain-source voltage is 60 volts suitable for 24V input equipment.

Comes in compact 8-pin TSMT-8 surface mount package. Low on-resistance of 91 milliohms reduces power loss and improves efficiency. Designed for applications in factory automation and motor control in base stations. Maximum power dissipation of 1.5 watts with enhancement mode operation.

Operating temperature ranges from -55°C to 150°C for reliability in harsh environments. Package dimensions length 3.1 mm, width 0.85 mm, height 2.9 mm. Pb-free lead plating with compliance to RoHS and halogen-free standards.

This ROHM MOSFET is suitable for industrial, manufacturing, and electronic control systems where efficient power switching and compact mounting are required. Browse more MOSFETs at EnvMart to find compatible components.

ROHM Type N, Type P-Channel MOSFET, 3.5 A, 60 V Enhancement, 8-Pin TSMT-8 QH8MC5TCR
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