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onsemi Bipolar Transistor NPN SOT-223 50 mA 300 V 4-Pin PZTA42T1G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 6.7mm
Model PZTA42T1G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 300V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz
Nexperia PZTA42,115 Transistor, 100 mA NPN, 300 V, 4-Pin SOT-223Brand Nexperia

Key Features

  • Suitable for switching and amplification in electronic circuits.
  • Maximum DC collector current of 50 mA enables precision operation.
  • Operates at collector-emitter voltages up to 300 V for high voltage tolerance.
  • SOT-223 surface mount package with 4 pins ensures ease of PCB integration.
  • Single NPN transistor configuration supports versatile circuit usage.
  • Maximum power dissipation of 1.5 W aids thermal reliability.
  • Minimum DC current gain (hFE) of 25 ensures stable performance.
  • Wide operating temperature range from -65°C to 150°C suits industrial environments.

Product Description

The onsemi PZTA42T1G Bipolar Transistor is a high-performance NPN device designed for use in a variety of electronic applications requiring high voltage tolerance and low current operation. Featuring a maximum DC collector current of 50 mA and collector-emitter voltage rating of 300 V, it is well suited for both switching and amplification tasks in industrial, automotive, and commercial circuit designs.

Integrating seamlessly with PCBs thanks to its SOT-223 surface mount package and four-pin configuration, this transistor is optimized for circuit stability and efficient thermal dissipation. The device's single NPN configuration allows versatile operation across many circuit requirements, including signal processing and voltage amplification in discrete semiconductors.

With a maximum power dissipation of 1.5 W and a minimum DC current gain (hFE) of 25, the PZTA42T1G provides reliable performance and stable gain under varied load conditions. It is engineered to operate across a wide temperature range from -65°C to 150°C, making it ideal for industrial and automotive environments where thermal robustness is essential.

The transistor’s maximum collector-base voltage and emitter-base voltage ratings, respectively 300 V and 6 V, support safe and reliable functioning in demanding electronic systems. Its transition frequency of 50 MHz makes it effective for moderate-frequency applications. Compliance with the automotive AEC-Q101 standard ensures suitability for automotive designs requiring enhanced reliability.

This product finds application in industrial automation, signal amplification, power switching, motor control circuits, voltage regulation, and any context where precise control of small currents at high voltages is necessary. The SOT-223 package facilitates straightforward soldering and mounting in automated production environments.

For engineers and designers seeking robust, consistent transistor performance with ease of integration into modern PCB layouts, the onsemi PZTA42T1G provides a reliable option for discrete semiconductor solutions. Buyers may browse the complete onsemi range under Bipolar Transistors on EnvMart to find suitable companions and alternatives based on project specifications.

onsemi Bipolar Transistor NPN SOT-223 50 mA 300 V 4-Pin PZTA42T1G
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Frequently Asked Questions

The maximum DC collector current for this model is 50 mA.

It has a collector-emitter voltage rating of up to 300 V.

This model comes in a SOT-223 surface mount package.

The minimum DC current gain (hFE) is 25, ensuring stable performance.

It operates within a temperature range of -65°C to 150°C.

The maximum power dissipation is 1.5 W.

The transition frequency is 50 MHz, suitable for moderate-frequency applications.

The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

It complies with the AEC-Q101 automotive standard.

The maximum emitter-base voltage (VEBO) is 6 V.

This model features a single NPN transistor configuration.

It is suitable for applications such as industrial automation, signal amplification, and power switching.

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