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DiodesZetex PNP Bipolar Transistor E-Line 2A 60V Through Hole ZTX751
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 17.98mm |
| Length | 4.77mm |
| Model | ZTX751 |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Series | ZTX |
| Maximum Operating Temperature | 200°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 80V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | -2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 140MHz |
| Magnatec BC461 PNP Bipolar Transistor, 2 A, 60 V, 3-Pin TO-39Brand | Magnatec |
| Diodes Inc ZTX753 Transistor, -2 A PNP, -100 V, 3-Pin TO-92Brand | DiodesZetex |
Key Features
- PNP bipolar transistor designed for amplification and power switching.
- Handles up to 2A DC collector current for higher load requirements.
- Collector-emitter voltage rated to 60V for robust circuit integration.
- E-Line three-pin through-hole package ensures easy mounting.
- Minimum DC current gain of 40 for stable signal amplification.
- Maximum transition frequency of 140MHz for high-speed circuit use.
- Maximum power dissipation of 1W for efficient heat management.
- Operating temperature range from -55°C to 200°C for versatile deployment.
Product Description
The DiodesZetex ZTX751 is a high-performance PNP bipolar transistor delivering reliable operation for power amplification and switching tasks in industrial, automotive, and electronics projects. Featuring a versatile E-Line package, this component fits seamlessly into circuit boards via through-hole mounting. With its robust maximum DC collector current of 2A and collector-emitter voltage capability up to 60V, the ZTX751 is engineered to handle demanding loads.
This transistor is suitable for general purpose amplification where both speed and power are required. With a minimum DC current gain (hFE) of 40, it maintains steady performance for signal processing. The device achieves a maximum transition frequency of 140MHz, making it ideal for high-speed and radio-frequency circuit applications. Its maximum power dissipation of 1W allows for enhanced heat management and sustained reliability.
The ZTX751 offers a broad thermal operating range, performing in temperatures from -55°C up to 200°C, making it ideal for harsh industrial environments and wide-ranging commercial deployments. The transistor’s E-Line package equips it with three pins for efficient through-hole installation. The maximum collector base voltage is rated at 80V, and the maximum emitter base voltage reaches 5V, ensuring safety and robustness across operating scenarios.
AEC-Q101 automotive standard compliance ensures reliability crucial for automotive electronics. The product is also suitable for laboratory instrumentation, manufacturing controls, and electronic design prototyping. Its compact dimensions (length 4.77mm, width 2.41mm, height 17.98mm) support streamlined board design.
Typical applications include signal amplification within analog and digital circuits, driver stages for motor controls, power switching, and high-frequency interface modules. This transistor is also compatible with advanced PCB designs and educational electronic builds.
Explore more DiodesZetex semiconductor components in the Bipolar Transistor category at EnvMart for reliable, industry-grade electronics solutions.
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Frequently Asked Questions
The maximum DC collector current for this model is 2A.
The collector-emitter voltage is rated at 60V for the ZTX751.
This model has a minimum DC current gain (hFE) of 40.
The maximum transition frequency for this transistor is 140MHz.
The operating temperature range for this unit is from -55°C to 200°C.
It uses an E-Line three-pin through-hole package for mounting.
The dimensions of this transistor are 4.77mm in length, 2.41mm in width, and 17.98mm in height.
The maximum power dissipation for this model is 1W.
The maximum collector base voltage is rated at 80V.
This transistor complies with the AEC-Q101 automotive standard.
It is suitable for power amplification, switching tasks, and high-frequency circuit applications.
This model connects in a circuit using a three-pin through-hole mounting configuration.
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