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ROHM MOSFET, Type N and Type P-Channel, 3.5 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement QH8MC5TCR

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 2.9mm
Length 3.1mm
Model QH8MC5TCR
Width 0.85mm
Mount Type Surface
Series QH8MC5
Maximum Operating Temperature 150°C
Package Type TSMT-8
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type N, Type P
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 91mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 3.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Dual N channel and P channel MOSFET suitable for 24V input equipment.
  • Compact 8-pin TSMT-8 surface mount package reduces board space.
  • Low on-resistance of 91 mΩ enhances power efficiency.
  • Maximum power dissipation of 1.5 W for improved thermal management.
  • Typical gate charge of 3.5 nC at Vgs for efficient switching.
  • Wide operating temperature range from -55°C to 150°C.
  • Forward voltage drop of 1.2 V ensuring low voltage losses.
  • Designed to lower overall power consumption in industrial equipment.

Product Description

ROHM QH8MC5TCR is a dual N channel and P channel MOSFET designed for applications requiring 3.5 A maximum continuous drain current and 60 V maximum drain source voltage. Operating in enhancement mode, this MOSFET is created for use in 24V input power systems commonly found in factory automation equipment and base station motors.

The device features a compact 8-pin TSMT-8 surface mount package allowing for efficient PCB layout and reduced size. It offers a low drain source resistance of 91 milliohms to minimize conduction losses, enabling energy-efficient operation and contributing to overall lower power consumption in complex electronic systems.

This MOSFET supports a maximum power dissipation of 1.5 watts and typical gate charge of 3.5 nanocoulombs at the gate-source voltage, facilitating fast switching speeds suitable for modern electronic and industrial control circuits.

Operating from a minimum temperature of -55°C to a maximum of 150°C, the QH8MC5TCR ensures reliable performance in industrial environments exposed to varying thermal conditions. The forward voltage drop of 1.2 volts further improves system efficiency by reducing voltage loss during conduction phases.

Manufactured with Pb-free lead plating, this product complies with RoHS and halogen-free standards, assuring environmentally friendly electronics production. It is optimized for industrial uses including automation, manufacturing machinery, and motor control applications requiring rugged, efficient MOSFET components.

Dual N channel and P channel MOSFET suitable for 24V input equipment. Compact 8-pin TSMT-8 surface mount package reduces board space. Low on-resistance of 91 mΩ enhances power efficiency. Maximum power dissipation of 1.5 W for improved thermal management.

Typical gate charge of 3.5 nC at Vgs for efficient switching. Wide operating temperature range from -55°C to 150°C. Forward voltage drop of 1.2 V ensuring low voltage losses. Designed to lower overall power consumption in industrial equipment.

Lead-free lead plating with RoHS and Halogen-Free compliant materials. Optimized for factory automation and motor applications on base stations.

Ideal for electronics, industrial automation, manufacturing machinery, and HVAC control systems, this MOSFET from ROHM offers reliable high-performance switching capability. Explore more within the ROHM brand and MOSFET products on EnvMart for your electronic component needs.

ROHM MOSFET, Type N and Type P-Channel, 3.5 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement QH8MC5TCR
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