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Infineon N-Channel MOSFET, 114 A Continuous Drain Current, 150 V Drain Source Voltage, Surface Mount BSC074N15NS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.2mm
Length 5.35mm
Model BSC074N15NS5ATMA1
Width 6.1mm
Mount Type Surface
Series BSC
Maximum Operating Temperature 150°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 114A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 9.2mΩ
Channel Mode N
Maximum Power Dissipation Pd 46W
Typical Gate Charge Qg @ Vgs 10nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • The device features a maximum drain source voltage of 150 V suitable for robust power applications.
  • SuperSO8 5x6 surface mount package with 8 pins enables efficient PCB mounting and thermal management.
  • Low on-resistance of 9.2 mOhm minimizes conduction losses for improved efficiency.
  • Maximum power dissipation rating of 46 W supports sustained heat management in demanding conditions.
  • The typical gate charge of 10 nC optimizes switching performance and reduces energy loss.
  • Wide operating temperature range from -55°C to 150°C ensures reliable performance in harsh environments.
  • Forward voltage during conduction is 1.2 V, balancing efficiency and robustness.
  • Maximum gate source voltage of 20 V provides flexible gate-drive options for various circuits.

Product Description

Infineon BSC074N15NS5ATMA1 is a high-voltage N-Channel MOSFET designed for surface-mount power applications requiring low conduction losses and high continuous current handling. It supports a continuous drain current of 114 A and can operate at a maximum drain source voltage of 150 V. The device comes in a SuperSO8 5x6 package featuring 8 pins, ideal for surface mounting on printed circuit boards to enable efficient electrical and thermal connections.

Built for industrial, telecom, and power supply equipment, this MOSFET offers low maximum drain source resistance of 9.2 mOhm, minimizing energy losses during conduction. Its typical gate charge of 10 nC contributes to efficient switching performance, reducing switching energy losses in high-frequency applications. The device supports a gate source voltage tolerance up to 20 V, allowing flexible gate drive implementations.

The MOSFET can withstand operating temperatures from -55°C to 150°C, ensuring durability and reliability in harsh and varied conditions encountered in power management and motor control systems. The forward voltage drop of 1.2 V during conduction balances performance and heat generation aspects. Compact physical dimensions (5.35 mm length, 6.1 mm width, 1.2 mm height) facilitate integration in dense electronics assemblies.

Applications include DC-DC converters with high current demands, synchronous rectifiers in power supplies, motor controllers requiring sustained high current, telecommunications power distribution modules, and industrial high-voltage switching devices. This device is suitable wherever efficient, robust, and compact power MOSFET solutions are required.

The device's high continuous current rating of 114 A enables support for demanding power systems. Low conduction losses result from the 9.2 mOhm RDS(on) specification. Surface mount SuperSO8 package ensures compatibility with automated PCB assembly processes.

Wide thermal operating range increases reliability in industrial and automotive applications. High power dissipation capability supports heavy thermal loads during operation. Explore EnvMart's diverse range of semiconductor devices and power MOSFET components for your industrial and commercial electronics needs.

Infineon N-Channel MOSFET, 114 A Continuous Drain Current, 150 V Drain Source Voltage, Surface Mount BSC074N15NS5ATMA1
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