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Infineon OptiMOS-T2 N-Channel MOSFET, 45 A, 60 V Enhancement Mode, 3-Pin TO-262 Package IPI45N06S409AKSA2

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 23.45mm
Length 10.2mm
Model IPI45N06S409AKSA2
Width 4.4mm
Mount Type Surface
Series OptiMOS-T2
Maximum Operating Temperature 175°C
Package Type TO-262
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 45A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 9.2mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 71W
Typical Gate Charge Qg @ Vgs 36nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • Offers an enhancement mode N-channel configuration for reliable switching.
  • Maximum continuous drain current rating of 45 amperes for high current applications.
  • Maximum drain-source voltage of 60 volts suits a wide range of power electronics.
  • Low on-resistance of 9.2 milliohms minimizes power loss during operation.
  • Supports high power dissipation up to 71 watts for efficient heat management.
  • Robust construction rated for operation between -55°C and 175°C.
  • Complies with automotive standard AEC-Q101 ensuring automotive reliability.
  • Compact 3-pin TO-262 surface mount package with precise dimensions.

Product Description

The Infineon OptiMOS-T2 IPI45N06S409AKSA2 is a high-performance N-channel MOSFET designed for demanding automotive and industrial power applications. Encapsulated in a reliable 3-pin TO-262 package, it supports a maximum continuous drain current of 45 A and a drain-source voltage rating of 60 V.

Featuring an enhancement mode channel, this MOSFET ensures efficient switching with a low on-resistance of 9.2 milliohms, which greatly reduces conduction losses and increases overall energy efficiency. It can dissipate up to 71 watts of power, enabling it to handle high power loads with appropriate thermal management.

Constructed to meet the AEC-Q101 automotive standard, the device is suitable for use in automotive environments requiring high temperature stability and reliability, with rated operating temperatures spanning from -55°C to 175°C.

With a typical gate charge of 36 nC at a gate voltage of 10 V, the MOSFET offers fast switching speeds, making it ideal for high-frequency power electronics such as DC-DC converters, motor drives, and other power management circuits.

The compact TO-262 package has exact dimensions of 23.45 mm height, 10.2 mm length, and 4.4 mm width, facilitating efficient PCB layout and ease of mounting in surface mount assemblies.

Enhancement mode N-channel MOSFET design. Continuous drain current up to 45 A for heavy-duty applications. Drain-source voltage rating of 60 V for versatile power handling. Low Rds(on) value of 9.2 mΩ for energy-efficient conduction.

High power dissipation capability of 71 W ensuring thermal robustness. Wide operating temperature range from -55°C to 175°C. Meets automotive AEC-Q101 standard for dependable vehicle electronics. Compact TO-262 package with 3 pins eases usage in various circuits.

Maximum gate-source voltage rating of 20 V for solid gate control. Typical gate charge of 36 nC enabling rapid switching characteristics.

This MOSFET is appropriate for applications in industrial, automotive, power management, and electronic control systems requiring robust and efficient semiconductor switching components. It provides excellent performance in surface mount power designs where high current and power handling are critical.

Explore more Infineon electronic components and MOSFETs at EnvMart to meet your power semiconductor needs with industry-grade quality and support.

Infineon OptiMOS-T2 N-Channel MOSFET, 45 A, 60 V Enhancement Mode, 3-Pin TO-262 Package IPI45N06S409AKSA2
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Frequently Asked Questions

The maximum continuous drain current of this model is 45 A, making it suitable for high current applications.

This MOSFET has a drain-source voltage rating of 60 V, allowing it to handle a wide range of power electronics applications.

It features a low on-resistance of 9.2 milliohms, which minimizes power loss during operation.

The maximum power dissipation capability is 71 W, enabling efficient thermal management in high power applications.

It operates within a temperature range of -55°C to 175°C, making it suitable for demanding environments.

The typical gate charge is 36 nC at a gate voltage of 10 V, which supports fast switching speeds.

The TO-262 package has dimensions of 23.45 mm in height, 10.2 mm in length, and 4.4 mm in width.

It complies with the AEC-Q101 automotive standard, ensuring reliability for automotive applications.

The maximum gate-source voltage rating for this model is 20 V, allowing for solid gate control.

This model features an enhancement mode N-channel configuration, suitable for efficient switching applications.

It is designed for surface mounting, facilitating easy integration into various circuits.

This MOSFET is suitable for applications in industrial, automotive, power management, and electronic control systems.

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