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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 23.45mm |
| Length | 10.2mm |
| Model | IPI45N06S409AKSA2 |
| Width | 4.4mm |
| Mount Type | Surface |
| Series | OptiMOS-T2 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-262 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 45A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 9.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 71W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
The Infineon OptiMOS-T2 IPI45N06S409AKSA2 is a high-performance N-channel MOSFET designed for demanding automotive and industrial power applications. Encapsulated in a reliable 3-pin TO-262 package, it supports a maximum continuous drain current of 45 A and a drain-source voltage rating of 60 V.
Featuring an enhancement mode channel, this MOSFET ensures efficient switching with a low on-resistance of 9.2 milliohms, which greatly reduces conduction losses and increases overall energy efficiency. It can dissipate up to 71 watts of power, enabling it to handle high power loads with appropriate thermal management.
Constructed to meet the AEC-Q101 automotive standard, the device is suitable for use in automotive environments requiring high temperature stability and reliability, with rated operating temperatures spanning from -55°C to 175°C.
With a typical gate charge of 36 nC at a gate voltage of 10 V, the MOSFET offers fast switching speeds, making it ideal for high-frequency power electronics such as DC-DC converters, motor drives, and other power management circuits.
The compact TO-262 package has exact dimensions of 23.45 mm height, 10.2 mm length, and 4.4 mm width, facilitating efficient PCB layout and ease of mounting in surface mount assemblies.
Enhancement mode N-channel MOSFET design. Continuous drain current up to 45 A for heavy-duty applications. Drain-source voltage rating of 60 V for versatile power handling. Low Rds(on) value of 9.2 mΩ for energy-efficient conduction.
High power dissipation capability of 71 W ensuring thermal robustness. Wide operating temperature range from -55°C to 175°C. Meets automotive AEC-Q101 standard for dependable vehicle electronics. Compact TO-262 package with 3 pins eases usage in various circuits.
Maximum gate-source voltage rating of 20 V for solid gate control. Typical gate charge of 36 nC enabling rapid switching characteristics.
This MOSFET is appropriate for applications in industrial, automotive, power management, and electronic control systems requiring robust and efficient semiconductor switching components. It provides excellent performance in surface mount power designs where high current and power handling are critical.
Explore more Infineon electronic components and MOSFETs at EnvMart to meet your power semiconductor needs with industry-grade quality and support.
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