Infineon HEXFET N-Channel Power MOSFET, 209 A, 75 V, Enhancement Mode, 3-Pin TO-247 IRFP2907PBF

Infineon IRFP2907PBF HEXFET N-Channel Power MOSFET is designed for high-current and low-voltage power switching applications. With a maximum continuous drain current of 209 A and a drain-source voltage rating of 75 V, this device supports demanding industrial and electronic circuit requirements. The enhancement mode channel ensures that the MOSFET is normally off until a gate voltage is applied, providing efficient and controllable switching performance.

Housed in a robust 3-pin TO-247 package, the IRFP2907PBF supports through-hole mounting, making it suitable for power electronics assemblies where heat dissipation and mechanical stability are critical. It features a low on-resistance of 5 milliohms, significantly reducing conduction losses and improving overall system efficiency.

The device operates reliably across a temperature range of -55°C to +175°C, making it ideal for harsh environments in industrial automation, power supply units, motor control, and automotive electronics where thermal endurance is crucial. A typical gate charge of 410 nC facilitates fast switching, minimizing switching losses in high-frequency circuits.

Infineon's HEXFET technology is recognized for its high durability and efficiency, ensuring long product life and improved energy savings. The MOSFET's forward voltage of 1.3 V supports effective current flow under load conditions, complementing the power dissipation capability of 470 W.

This product is manufactured in China under stringent quality standards, enabling industrial, manufacturing, and commercial applications that demand reliable semiconductor performance. It is part of Infineon's broad portfolio of discrete semiconductor devices, offering customized solutions for power management and control circuits.

HEXFET technology ensures low conduction losses. High power dissipation supports demanding applications. Wide operating temperature range enables use in harsh conditions. Low gate charge allows efficient switching at high frequencies.

Robust TO-247 package suitable for through-hole mounting. Designed for industrial, automotive, and power electronics sectors. Explore more Infineon semiconductors and power MOSFETs on EnvMart to enhance your electronic designs with reliable proprietary technology and high-performance components.