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onsemi QFET Type P-Channel MOSFET 1 A 100 V Enhancement 4-Pin SOT-223 FQT5P10TF

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onsemi QFET Type P-Channel MOSFET 1 A 100 V Enhancement 4-Pin SOT-223 FQT5P10TF

Name: onsemi QFET Type P-Channel MOSFET 1 A 100 V Enhancement 4-Pin SOT-223 FQT5P10TF
Brand: onsemi
SKU: 347532
Price: 0.53 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.6mm
Length	6.5mm
Model	FQT5P10TF
Width	3.56mm
Mount Type	Surface
Series	QFET
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	Type P
Maximum Continuous Drain Current Id	1A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	1.05Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	6.3nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	-4V

Key Features

Designed for surface mount with 4-pin SOT-223 package.
Maximum continuous drain current capacity of 1 ampere.
Drain-source voltage rating up to 100 volts.
Low drain-source resistance of 1.05 ohms reduces conduction losses.
Supports gate-source voltage range from -30 to +30 volts.
Maximum power dissipation of 2 watts ensures reliable operation.
Operates over a temperature range from -55°C to 150°C.
Typical gate charge of 6.3 nanocoulombs reduces switching losses.

Product Description

onsemi FQT5P10TF is a QFET Type P-Channel MOSFET designed for power management in electronic circuits. It provides a continuous drain current of 1 A with a maximum drain-source voltage of 100 V. The transistor features a surface mount SOT-223 package with 4 pins, allowing compact integration in circuit designs.

Its enhancement-mode channel and low on-state resistance of 1.05 Ω offer improved efficiency by minimizing conduction losses. The device supports a gate-source voltage range from -30 V to +30 V, making it suitable for robust switching applications.

The MOSFET can dissipate up to 2 watts of power and operates reliably across a wide temperature range from -55°C to 150°C. Typical gate charge of 6.3 nC and low output capacitance reduce switching losses, enhancing performance in DC-DC converters, power supplies, lighting ballasts, and motion control equipment.

Compact dimensions with a length of 6.5 mm, width of 3.56 mm, and height of 1.6 mm facilitate easy placement on printed circuit boards. onsemi's advanced QFET planar technology ensures a superior figure of merit for efficient power handling and thermal management.

This MOSFET is widely used in industrial, electronic, and automotive applications where efficient switching and power control are critical. The device complies with standard quality requirements but does not carry specific automotive or other industry certifications.

Designed for surface mount with 4-pin SOT-223 package. Maximum continuous drain current capacity of 1 ampere. Drain-source voltage rating up to 100 volts. Low drain-source resistance of 1.05 ohms reduces conduction losses.

Supports gate-source voltage range from -30 to +30 volts. Maximum power dissipation of 2 watts ensures reliable operation. Operates over a temperature range from -55°C to 150°C. Typical gate charge of 6.3 nanocoulombs reduces switching losses.

Compact dimensions: length 6.5 mm, width 3.56 mm, height 1.6 mm. Utilizes advanced QFET technology for improved efficiency in power applications. Explore the wide selection of MOSFETs and other semiconductor devices at EnvMart for industrial and electronic component needs.