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Infineon 1200 V 11.8 A Schottky Diode Single Configuration 3-Pin TO-220 IDH02G120C5XKSA1

Category Schottky Diodes & Rectifiers Brand Infineon Condition New

Specifications

Country of Origin Malaysia
Brand Infineon
Height 15.95mm
Length 10.2mm
Model IDH02G120C5XKSA1
Width 4.5mm
Mount Type Through Hole
Series IDH02G120C5
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Forward Current If 11.8A
Peak Reverse Repetitive Voltage Vrrm 1200V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 90μA
Peak Non-Repetitive Forward Surge Current Ifsm 37A
Maximum Forward Voltage Vf 2.3V

Key Features

  • This diode features a through-hole mount with a compact TO-220 package.
  • Designed for high efficiency with a maximum forward voltage of 2.3 V.
  • Reliable operation at temperatures ranging from -55°C to 175°C.
  • Supports a peak non-repetitive forward surge current of 37 A for transient conditions.
  • Low peak reverse current of 90 μA ensures minimal leakage losses.
  • Measures 15.95 mm in height, 10.2 mm in length, and 4.5 mm in width for easy PCB integration.
  • Suitable for applications in telecom power supplies, servers, UPS systems, motor drives, solar inverters, and lighting.

Product Description

Infineon IDH02G120C5XKSA1 Schottky Diode is a silicon carbide (SiC) device from Infineon's thinQ! Generation 5 series featuring advanced thin wafer technology that enhances thermal performance. This diode supports a maximum continuous forward current of 11.8 A and a repetitive peak reverse voltage rating of 1200 V, ideal for high voltage power semiconductor use.

The device uses a single diode configuration housed in the industry-standard TO-220 through-hole mount package, featuring 3 pins and compact dimensions (15.95 mm height, 10.2 mm length, 4.5 mm width). It operates reliably under temperatures from -55°C to 175°C, suitable for demanding electrical environments.

With a maximum forward voltage drop of 2.3 V and a peak forward surge current capacity of 37 A, this Schottky diode ensures reduced conduction losses and robust transient handling. The low peak reverse current of 90 μA helps minimize power dissipation and leakage.

Its enhanced thermal conductivity and high breakdown field strength enable efficient operation in telecom switched-mode power supplies (SMPS), server power systems, uninterruptible power supplies (UPS), motor drives, solar inverter circuits, and high-performance lighting applications.

The product is manufactured in Malaysia and complies with industry standards, although it has no specific automotive certification. The device does not carry any additional regulatory approvals, focusing instead on delivering reliability and performance in power electronic circuits.

This diode features a through-hole mount with a TO-220 package type. Maximum continuous forward current is 11.8 A with a peak reverse voltage of 1200 V. Maximum forward voltage is 2.3 V and peak surge current is 37 A. Operating temperature ranges from -55°C to 175°C allowing wide industrial and commercial applications.

Compact dimensions facilitate efficient PCB layout and integration. Ideal for telecom power supplies, servers, uninterruptible power supplies, motor drives, solar power, and lighting systems. Manufactured in Malaysia with proven SiC technology for superior thermal performance.

Explore more power semiconductors and Schottky diode options at EnvMart for your industrial, laboratory, construction, HVAC, manufacturing, and electronic design needs.

Explore more products in our Schottky Diodes & Rectifiers category.

Infineon 1200 V 11.8 A Schottky Diode Single Configuration 3-Pin TO-220 IDH02G120C5XKSA1
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