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Infineon CoolMOS P7 Type N-Channel MOSFET, 13 A, 800 V Enhancement Mode, 3-Pin TO-220 IPA80R360P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA80R360P7XKSA1 |
| Mount Type | Surface |
| Series | CoolMOS P7 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 360mΩ |
| Channel Mode | Enhancement |
Key Features
- Capable of handling a maximum continuous drain current of 13 amperes.
- Maximum drain-source voltage rating of 800 volts suited for industrial power applications.
- In a 3-pin TO-220 surface-mount package for easy integration in electronic circuits.
- Offers an Rds(on) resistance of 360 milliohms to reduce conduction losses.
- Designed with enhancement mode channel for reliable switching performance.
- Ideal for use in flyback converters, adapters, LED drivers, audio SMPS, and industrial power circuits.
- Improves efficiency by up to 0.6% and lowers transistor temperature by 2 to 8 degrees Celsius compared to predecessors.
- Facilitates higher power density designs due to lower switching losses.
Product Description
Infineon IPA80R360P7XKSA1 CoolMOS P7 Type N-Channel MOSFET is engineered for high-efficiency power management in industrial and electronic applications. Rated for a maximum continuous drain current of 13 A and drain-source voltage of 800 V, it is designed for enhancement mode operation and housed in a 3-pin TO-220 package facilitating surface mount assembly.
This MOSFET is optimized for flyback converters including adapters, chargers, LED drivers, audio switching power supplies, auxiliary power, and industrial power equipment. The device offers up to 0.6% improvement in efficiency and reduces MOSFET temperature by 2 to 8 degrees Celsius compared to previous generations, enabling more reliable and compact power designs.
Its low on-resistance of 360 mΩ minimizes conduction losses, while lower switching losses permit higher power density PCB layouts, making it ideal for modern compact industrial electronics. The robust design improves production yields by reducing electrostatic discharge related failures, lowering field returns and warranty costs.
Overall, the IPA80R360P7XKSA1 helps engineers to save on material costs and reduces assembly complexity, benefiting from Infineon's CoolMOS P7 technology advancements. Capable of handling a maximum continuous drain current of 13 amperes.
Maximum drain-source voltage rating of 800 volts suited for industrial power applications. In a 3-pin TO-220 surface-mount package for easy integration in electronic circuits. Offers an Rds(on) resistance of 360 milliohms to reduce conduction losses.
Designed with enhancement mode channel for reliable switching performance. Improves efficiency by up to 0.6% and reduces transistor temperature by 2 to 8 degrees Celsius. Optimized for high power density and low switching loss designs in flyback applications.
Enhances production yield by lowering ESD failures and field returns. Ideal for applications in industrial, power supply, audio, and LED drive electronics. Facilitates cost savings in bills of materials and reduces assembly complexity.
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Frequently Asked Questions
The Infineon IPA80R360P7XKSA1 can handle a maximum continuous drain current of 13 amperes.
This model has a maximum drain-source voltage rating of 800 volts, making it suitable for industrial power applications.
It is housed in a 3-pin TO-220 surface-mount package, facilitating easy integration into electronic circuits.
The Rds(on) resistance of this unit is 360 milliohms, which helps to reduce conduction losses.
This model features a Type N channel designed for enhancement mode operation.
It is optimized for use in flyback converters, adapters, LED drivers, audio switching power supplies, and industrial power equipment.
It offers an efficiency improvement of up to 0.6% and lowers the transistor temperature by 2 to 8 degrees Celsius compared to earlier models.
Its low switching losses allow for higher power density designs, making it suitable for modern compact industrial electronics.
The Infineon IPA80R360P7XKSA1 is manufactured in India.
This model is part of the CoolMOS P7 series, designed for high-efficiency power management.
This MOSFET is designed for surface mounting, which allows for easier integration into electronic circuits.
The enhancement mode channel design provides reliable switching performance, essential for efficient power management in various applications.
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