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Infineon 1200 V 10 A Silicon Carbide Schottky Diode 2-Pin TO-247 IDWD10G120C5XKSA1

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Infineon 1200 V 10 A Silicon Carbide Schottky Diode 2-Pin TO-247 IDWD10G120C5XKSA1

Name: Infineon 1200 V 10 A Silicon Carbide Schottky Diode 2-Pin TO-247 IDWD10G120C5XKSA1
Brand: Infineon
SKU: 171212
Price: 3.93 USD
Availability: InStock

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Category Schottky Diodes & Rectifiers Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Length	40.21mm
Model	IDWD10G120C5XKSA1
Width	15.8mm
Mount Type	SMD
Series	5th Generation CoolSiCTM 1200V
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS Compliant
Pin Count	2
Maximum Continuous Forward Current If	10A
Peak Reverse Repetitive Voltage Vrrm	1200V
Diode Configuration	Silicon Carbide Diode
Rectifier Type	Schottky
Peak Reverse Current Ir	80μA
Peak Non-Repetitive Forward Surge Current Ifsm	140A
Maximum Forward Voltage Vf	1.7V

Key Features

5th Generation CoolSiC technology for improved efficiency and performance.
Maximum continuous forward current of 10 amperes for reliable power handling.
Peak reverse repetitive voltage rated at 1200 volts.
Real two-pin package with 8.7 mm creepage and clearance distances for safety.
Wide operating temperature range from -55°C to 175°C.
Low forward voltage of 1.7 V, ensuring reduced conduction losses.
High surge current capability with peak non-repetitive forward surge current up to 140 A.
Temperature-independent switching behavior with no reverse recovery current.

Product Description

Infineon IDWD10G120C5XKSA1 is a 1200 V, 10 A silicon carbide Schottky diode designed for industrial and power electronics applications. It uses advanced 5th Generation CoolSiC technology to deliver enhanced efficiency and robustness compared to traditional silicon diodes. Housed in a real two-pin TO-247 package, it provides increased safety with 8.7 mm creepage and clearance distances suitable for high-pollution environments.

This diode is optimized for use in conjunction with Si IGBTs or super-junction MOSFETs, enabling higher efficiency in circuits such as Vienna rectifiers and PFC boost stages found in 3-phase conversion systems. The device features no forward recovery voltage or reverse recovery current, ensuring fast, temperature-independent switching performance with minimal losses.

The maximum continuous forward current rating of 10 A and a peak reverse voltage of 1200 V make it suitable for a wide range of discrete semiconductor applications. High surge current capability (140 A peak) enhances robustness during transient conditions. The diode maintains a low forward voltage of 1.7 V even at elevated operating temperatures up to 175°C, contributing to reduced heat generation and improved reliability.

Operating reliably from -55°C to 175°C, this device meets industrial and commercial requirements. It is RoHS compliant, underscoring its environmental friendliness. Physical dimensions of 40.21 mm in length and 15.8 mm in width provide a compact footprint for power module integration.

This diode is ideal for industrial power supplies, motors drives, renewable energy inverters, and other high-efficiency power conversion applications. Its enhanced electrical performance and robust packaging solutions can contribute significantly to increased system efficiency and reliability.

5th Generation CoolSiC diode technology. 1200 V reverse voltage and 10 A continuous forward current ratings. Real two-pin TO-247 package with enhanced creepage distance. High surge current of 140 A supports transient robustness.

Low forward voltage and temperature-independent switching. Explore more Infineon semiconductor components and Schottky diodes in the EnvMart collection for efficient power electronics solutions.

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